Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Method of forming an oxide film










Image Number 7 for United States Patent #6586346.

A method of forming an oxide film and a method of manufacturing an electronic device utilizing the oxide film is disclosed. A silicon oxide film is formed on a substrate by sputtering. Therefore, the film formation is carried out at a low temperature. The sputtering atmosphere comprises an oxidizing gas and an inert gas such as argon. In order to prevent fixed electric charges from being generated in the film and to obtain an oxide film of good properties, the proportion of argon is adjusted to 20% or less. Alternatively, a gas including halogen elements such as fluorine is added to the above sputtering atmosphere at a proportion less than 20%. Hereupon, alkali ions and dangling bonds of silicon in the oxide film are neutralized by the halogen elements, whereby a fine oxide film is obtained.








 
 
  Recently Added Patents
Tungsten barrier and seed for copper filled TSV
Co-crystals of agomelatine, a process for there preparation and pharmaceutical compositions containing them
Wireless communication power control
Liquid crystal display
Method and computed tomography device and data storage medium for performing a dynamic CT examination on a patient
System and method for confirming delivery of an electronic message
Systems and methods for archiving and retrieving navigation points in a voice command platform
  Randomly Featured Patents
Titanium alloy bolt and its manufacturing process
Optical film for display devices
Image processing method and apparatus, and storage medium
TADDOL and titanium ( ) taddolate dendrimers and composition
Refrigerator
Runner of an umbrella
Magnetic coil tattooing machine
Method for processing a nut seat on a wheel
X-ray projection exposure apparatus and a device manufacturing method
Magnetic recording medium