Resources Contact Us Home
Method of forming an oxide film

Image Number 4 for United States Patent #6586346.

A method of forming an oxide film and a method of manufacturing an electronic device utilizing the oxide film is disclosed. A silicon oxide film is formed on a substrate by sputtering. Therefore, the film formation is carried out at a low temperature. The sputtering atmosphere comprises an oxidizing gas and an inert gas such as argon. In order to prevent fixed electric charges from being generated in the film and to obtain an oxide film of good properties, the proportion of argon is adjusted to 20% or less. Alternatively, a gas including halogen elements such as fluorine is added to the above sputtering atmosphere at a proportion less than 20%. Hereupon, alkali ions and dangling bonds of silicon in the oxide film are neutralized by the halogen elements, whereby a fine oxide film is obtained.

  Recently Added Patents
Method and system for physical verification using network segment current
Systems and methods for adaptive blind mode equalization
Photomask blank, photomask blank manufacturing method, and photomask manufacturing method
Method and apparatus for automatically controlling gas pressure for a plasma cutter
Glycosyltransferase promoter
Antisense modulation of C-reactive protein expression
Formwork release composition and use thereof
  Randomly Featured Patents
Combustion chamber/venturi cooling for a low NOx emission combustor
Radio-frequency laser module and a method for producing it
Method and apparatus for measuring a characteristic of a sample feature
Sunbathing filter with incomplete UV-B absorption
Composite, solid, vehicle tire
Apparatus for detecting location of movable body in navigation system and method thereof
Disposable food container
Information storage medium and information recording/playback system
Methods and apparatus for assay measurements
Vacuum detection switch