Resources Contact Us Home
Method of forming an oxide film

Image Number 10 for United States Patent #6586346.

A method of forming an oxide film and a method of manufacturing an electronic device utilizing the oxide film is disclosed. A silicon oxide film is formed on a substrate by sputtering. Therefore, the film formation is carried out at a low temperature. The sputtering atmosphere comprises an oxidizing gas and an inert gas such as argon. In order to prevent fixed electric charges from being generated in the film and to obtain an oxide film of good properties, the proportion of argon is adjusted to 20% or less. Alternatively, a gas including halogen elements such as fluorine is added to the above sputtering atmosphere at a proportion less than 20%. Hereupon, alkali ions and dangling bonds of silicon in the oxide film are neutralized by the halogen elements, whereby a fine oxide film is obtained.

  Recently Added Patents
Method for treating hyperglycemia
Composite conductive pads/plugs for surface-applied nerve-muscle electrical stimulation
Nano-pigment inkjet ink composition that has a low odor and is environmentally-friendly
Microcapsules, their use and processes for their manufacture
Performance metrics processing for anticipating unavailability
Encryption using alternate authentication key
  Randomly Featured Patents
Joining of ceramic components to metal components
Semiconductor light emitting diode
Peptide-aldehydes, process for the preparation thereof and pharmaceutical compositions containing the same
Packaging material for controlled atmosphere packaging
Neutralization of electrostatic charges
Prestress device
Express window lift motor shutdown
Method for performing a diagnostic on an exhaust gas analyzer probe disposed in the exhaust system of an internal combustion engine and device for implementing the method
Retroreflective strip with pocket
Fire resistant coatings