Resources Contact Us Home
Method of forming an oxide film

Image Number 10 for United States Patent #6586346.

A method of forming an oxide film and a method of manufacturing an electronic device utilizing the oxide film is disclosed. A silicon oxide film is formed on a substrate by sputtering. Therefore, the film formation is carried out at a low temperature. The sputtering atmosphere comprises an oxidizing gas and an inert gas such as argon. In order to prevent fixed electric charges from being generated in the film and to obtain an oxide film of good properties, the proportion of argon is adjusted to 20% or less. Alternatively, a gas including halogen elements such as fluorine is added to the above sputtering atmosphere at a proportion less than 20%. Hereupon, alkali ions and dangling bonds of silicon in the oxide film are neutralized by the halogen elements, whereby a fine oxide film is obtained.

  Recently Added Patents
Compositions and methods for producing isoprene
Sign language keyboard and sign language searching apparatus using the same
Electronic system with vertical intermetallic compound
Polarized film apparatus with bands of alternating orientation
Illumination apparatus
Program recording medium, image processing apparatus, imaging apparatus, and image processing method
  Randomly Featured Patents
Optical track position detecting apparatus and optical information processor using the same
Urethane encapsulated integrated circuits and compositions therefor
Method of forming a protective layer over Cu filled semiconductor features
Self latching input buffer
Process for preparing a cycloolefin copolymer
Semiconductor light emitting device and method of fabricating the same
Flexible measurement device
Workpiece loader
Beverage brewing apparatus
Battery powered glue gun