Resources Contact Us Home
Non-volatile ferroelectric capacitor memory circuit having nondestructive read capability

Image Number 3 for United States Patent #6574134.

A non-destructive ferroelectric capacitor-based memory circuit has a plurality of word lines located in parallel to each other. A plurality of bit lines is located across the word lines and a plurality of memory cells is located at intersections between the word lines and the bit lines. Each of the memory cells further has a MOS transistor and two ferroelectric capacitors coupled together in series to have a common node to couple with the transistor, and two plate lines coupled with two non-common nodes of the two series ferroelectric capacitors, respectively.

  Recently Added Patents
Fuse part in semiconductor device and method for forming the same
Method for producing SOI substrate and SOI substrate
Phase noise extraction apparatus and technique
Haworthia plant named `AMSTERDAM`
Power or voltage oscillation damping in a power transmission system
Permutational memory cells
Control service for relational data management
  Randomly Featured Patents
Output controller with test unit
Triaxial acceleration sensor
Fluorine control system with fluorine monitor
Method for initiating in-situ vitrification using an impregnated cord
Step-by-step ratchet mechanism with a silent ratchet
Method for surface treatment of copper foil
Condenser microphone
Snoring treatment
Starter generator for internal combustion engine