Resources Contact Us Home
Non-volatile ferroelectric capacitor memory circuit having nondestructive read capability

Image Number 3 for United States Patent #6574134.

A non-destructive ferroelectric capacitor-based memory circuit has a plurality of word lines located in parallel to each other. A plurality of bit lines is located across the word lines and a plurality of memory cells is located at intersections between the word lines and the bit lines. Each of the memory cells further has a MOS transistor and two ferroelectric capacitors coupled together in series to have a common node to couple with the transistor, and two plate lines coupled with two non-common nodes of the two series ferroelectric capacitors, respectively.

  Recently Added Patents
High density vertical structure nitride flash memory
Light-emitting diode devices
Image processing device and information storage medium including motion vector information calculation
Method, system and computer program product for managing funds in custodial deposit accounts
Timing controller capable of removing surge signal and display apparatus including the same
Facial recognition using a sphericity metric
Portable gaming device and gaming system combining both physical and virtual play elements
  Randomly Featured Patents
Locking apparatus for use in game machine
Sign and method for lighting
Plug protector cover
Exhaust system for motorcycle
Grid-line-free contact for a photovoltaic cell
Switching system in a combined microwave and convection cooking apparatus
Subminiaturized adjustable capacitor
Method and apparatus for operating a virtual keyboard
Image forming apparatus
Camper shell