Resources Contact Us Home
Non-volatile ferroelectric capacitor memory circuit having nondestructive read capability

Image Number 3 for United States Patent #6574134.

A non-destructive ferroelectric capacitor-based memory circuit has a plurality of word lines located in parallel to each other. A plurality of bit lines is located across the word lines and a plurality of memory cells is located at intersections between the word lines and the bit lines. Each of the memory cells further has a MOS transistor and two ferroelectric capacitors coupled together in series to have a common node to couple with the transistor, and two plate lines coupled with two non-common nodes of the two series ferroelectric capacitors, respectively.

  Recently Added Patents
Area reduction for surface mount package chips
Fuel cell system with mechanical check valve
Vanilloid receptor ligands and use thereof for the production of pharmaceutical preparations
Listing recommendation using generation of a user-specific query in a network-based commerce system
Passive charge cord release system for an electric vehicle
Quantum dot template for fast and simultaneous detection of different infectious agents
Method and composition for improving skin barrier function
  Randomly Featured Patents
Mobile equipment with three dimensional display function
Load detection device
Method and apparatus for providing subscriber-based ringback tone
System and method for dispensing bulk products
Fishing tournament calculator
Pigtail fastener
Directional tap detection algorithm using an accelerometer
IC test handler having a planet rotating mechanism for cooling or heating ICs
Cyclohexenone derivatives, preparation thereof and use thereof as herbicidal and plant growth regulator agents