Resources Contact Us Home
Non-volatile ferroelectric capacitor memory circuit having nondestructive read capability

Image Number 3 for United States Patent #6574134.

A non-destructive ferroelectric capacitor-based memory circuit has a plurality of word lines located in parallel to each other. A plurality of bit lines is located across the word lines and a plurality of memory cells is located at intersections between the word lines and the bit lines. Each of the memory cells further has a MOS transistor and two ferroelectric capacitors coupled together in series to have a common node to couple with the transistor, and two plate lines coupled with two non-common nodes of the two series ferroelectric capacitors, respectively.

  Recently Added Patents
Lithographic apparatus and device manufacturing method
Disk drive to enable defect margining
Composite materials comprising aggregate and an elastomeric composition
Plants and seeds of hybrid corn variety CH817100
Evolutionary clustering algorithm
Process and apparatus for producing composite material that includes carbon nanotubes
  Randomly Featured Patents
Computer controlled gas lift system
Method and apparatus for improving the performance of a host-based color printing system
Hydraulic surgical cement
Nucleic acids encoding a G-protein coupled receptor involved in sensory transduction
Particle source with selectable beam current and energy spread
Thermopile infrared sensor by monolithic silicon micromachining
Registered multiple stamping
Power cord system for welding-type devices
Polyhydroxystyrene with a novolak type structure