Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Non-volatile ferroelectric capacitor memory circuit having nondestructive read capability










Image Number 3 for United States Patent #6574134.

A non-destructive ferroelectric capacitor-based memory circuit has a plurality of word lines located in parallel to each other. A plurality of bit lines is located across the word lines and a plurality of memory cells is located at intersections between the word lines and the bit lines. Each of the memory cells further has a MOS transistor and two ferroelectric capacitors coupled together in series to have a common node to couple with the transistor, and two plate lines coupled with two non-common nodes of the two series ferroelectric capacitors, respectively.








 
 
  Recently Added Patents
Printing apparatus and method of operation of a printing apparatus
Integrated process for the manufacture of fluorinated olefins
Systems and methods for documenting medical findings of a physical examination
System and method for managing self-refresh in a multi-rank memory
Spalling utilizing stressor layer portions
SMS transport resource control
Method and system for checking citations
  Randomly Featured Patents
Pop-up electrical receptacle unit
Free-space quantum cryptography system
Automated financial transaction apparatus with interface that adjusts to the user
Digitized MR signal data encoding with dynamically variable bit rate
Method of fabricating a thin film transistor
Method of manufacturing integrated circuit device including recessed channel transistor
Gas sensor
Isoxazole derivatives and their use as herbicides
Printing press with ink separator and method for separating ink from dampener solution
Tryptamine compounds, and methods of cerebrovascular treatment therewith