Resources Contact Us Home
Method of polishing a layer comprising copper using an oxide inhibitor slurry

Image Number 3 for United States Patent #6566266.

A process for polishing a semiconductor body according to an embodiment of the present invention includes the steps of providing a semiconductor body, forming a barrier layer over a portion of the semiconductor body, and forming at least one layer including copper over a portion of the barrier layer. The process further includes the steps of polishing at least a portion of the layer including copper with a first polishing slurry composition and changing the polishing composition from the first slurry composition to a second polishing slurry composition. The process also includes the steps of polishing at least a portion of the layer including copper with the second slurry composition and polishing at least a portion of the barrier layer with the second slurry composition. Moreover, the second slurry composition includes an effective amount of a copper oxide inhibitor to substantially inhibit copper oxide formation. In an embodiment, the effective amount of the copper oxide inhibitor is between about 0.005% and 0.03% by weight of the second slurry composition. In another embodiment, the second slurry composition is different than the first slurry composition.

  Recently Added Patents
Hepodxilin analog enantiomers
Piezoelectric speaker and method of manufacturing the same
Hedge shear
Luggage cart
Auto-provisioning of network services over an Ethernet access link
  Randomly Featured Patents
Cyanine compounds, optical filters, and optical recording materials
System for generating foam
Method for cleaning a paint roller pad
Unitary video cassette recorder and television receiver
Process for the synthesis of ethanol and acetaldehyde using cobalt compounds with novel promoters
Cop 1 for treatment of inflammatory bowel diseases
Method and apparatus to support SDMA transmission of a OFDMA based network
Flashlight recharger