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SiGe transistor, varactor and p-i-n velocity saturated ballasting element for BiCMOS peripheral circuits and ESD networks

Image Number 9 for United States Patent #6552406.

An SiGe device configured to exhibit high velocity saturation resistance characteristic for buffering large voltages at low currents, wherein for circuit applications, the SiGe device is connected in series with a circuit element for protection of the circuit element. Advantageously, the device may be exploited as a buffer element providing ESD circuit protection for receiver devices, power supply clamp circuits and I/O driver circuits.

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