Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Method of manufacturing a semiconductor device having a low leakage current










Image Number 17 for United States Patent #6514834.

A field oxide film is provided in the surface of a semiconductor substrate. An interlayer insulating film is provided on the semiconductor substrate so as to cover an active layer. A contact hole exposing the surface of the active layer is provided in the interlayer insulating film. A conductor fills the contact hole so as to be electrically connected to the surface of the active layer. The end portion of the field oxide film has a surface perpendicular with respect to the surface of the semiconductor substrate. As a result, a dynamic random access memory can be obtained which is improved so that leakage current is reduced, which in turn increases a hold time of information.








 
 
  Recently Added Patents
Golf club cover
Automotive lighting system
Latch-up free ESD protection
Enhanced telephony services
Antenna support device
Use of endogenous promoters in genetic engineering of Nannochloropsis gaditana
Automatic baroreflex modulation responsive to adverse event
  Randomly Featured Patents
Flow control valve for hydraulic circuits
Backlighting apparatus for a keypad assembly
Fastener
Control apparatus for an in-cylinder injection internal combustion engine
Medical instrument
Methods of preparing anion surface-active substances
Autoadjusting electron microscope
Spark plug for internal combustion engine and related manufacturing method
Exercise apparatus
Inflatabe metal bladders for automobile passenger protection