Resources Contact Us Home
Method of manufacturing a semiconductor device having a low leakage current

Image Number 17 for United States Patent #6514834.

A field oxide film is provided in the surface of a semiconductor substrate. An interlayer insulating film is provided on the semiconductor substrate so as to cover an active layer. A contact hole exposing the surface of the active layer is provided in the interlayer insulating film. A conductor fills the contact hole so as to be electrically connected to the surface of the active layer. The end portion of the field oxide film has a surface perpendicular with respect to the surface of the semiconductor substrate. As a result, a dynamic random access memory can be obtained which is improved so that leakage current is reduced, which in turn increases a hold time of information.

  Recently Added Patents
Profile-based user access to a network management system
Compositions substantially free of sodium chloride and methods for the storage of red blood cells
Systems and methods for optimizing capital structure of a financial institution
Generalized AC-DC synchronous rectification techniques for single- and multi-phase systems
Non-visual presentation of information on an electronic wireless device
Crystal structure of human JAK3 kinase domain complex and binding pockets thereof
Light powered hearing aid
  Randomly Featured Patents
Semiconductor device and test method with boundary scan
Expedited resource negotiation in SIP
Gas turbine moving blade
Temperature compensating ceramic metal bearing systems
Method and apparatus for determining ventricular fibrillation
Motilide compounds
Method for reducing the appearance of false positive bands in SDS-page analysis of proteolytic digestion of a sample
Shaped container
Seal having resilient core and outer cover
Bridge device access system