Resources Contact Us Home
Method of manufacturing a semiconductor device having a low leakage current

Image Number 17 for United States Patent #6514834.

A field oxide film is provided in the surface of a semiconductor substrate. An interlayer insulating film is provided on the semiconductor substrate so as to cover an active layer. A contact hole exposing the surface of the active layer is provided in the interlayer insulating film. A conductor fills the contact hole so as to be electrically connected to the surface of the active layer. The end portion of the field oxide film has a surface perpendicular with respect to the surface of the semiconductor substrate. As a result, a dynamic random access memory can be obtained which is improved so that leakage current is reduced, which in turn increases a hold time of information.

  Recently Added Patents
Method and system for providing geohazard information to customers
Circuitry testing module and circuitry testing device
Automated synchronization of design features in disparate code components using type differencing
Three-dimensional shape data processing apparatus and three-dimensional shape data processing method
Dynamic report mapping apparatus to physical data source when creating report definitions for information technology service management reporting for peruse of report definition transparency a
Reliable and accurate usage detection of a software application
Data output apparatus and data output method
  Randomly Featured Patents
Optical recording and reproducing apparatus for tracking wobbling guide grooves
Process for the preparation of (2-amino-thiazol-4yl)-acetic acid hydrochloride
Robot and method for controlling the same
Pet collar key
Handle assembly for connecting resilient ropes
Drum type washing machine and dryer
Active pilot wire apparatus for electromechanical current differential relays
Positive displacement four lobe impeller structure
High voltage transformer
Cooled rotor blade for a gas turbine