Resources Contact Us Home
Method of manufacturing a semiconductor device having a low leakage current

Image Number 17 for United States Patent #6514834.

A field oxide film is provided in the surface of a semiconductor substrate. An interlayer insulating film is provided on the semiconductor substrate so as to cover an active layer. A contact hole exposing the surface of the active layer is provided in the interlayer insulating film. A conductor fills the contact hole so as to be electrically connected to the surface of the active layer. The end portion of the field oxide film has a surface perpendicular with respect to the surface of the semiconductor substrate. As a result, a dynamic random access memory can be obtained which is improved so that leakage current is reduced, which in turn increases a hold time of information.

  Recently Added Patents
Controller with screen
Network attachment for IMS systems for legacy CS UE with home node B access
Systems, methods and apparatus for payment processing
Image forming apparatus with static elimination
Method for production of fermentable sugars from biomass
Integrated bug tracking and testing
All-angle light emitting element having high heat dissipating efficiency
  Randomly Featured Patents
Conventive smoke filtering cleaner
Tailgate ladder
Process for preparing phosphinate esters
Awning head rod molding
Floor lamp with conical translucent shade
Fabrication method of gate electrode in semiconductor device
Methods of performing error detection/correction in nonvolatile memory devices
Structural laminate and method for making same
Method for determining a tooth period length of a bone milling cutter
Engine oil consumption measurement device and engine oil consumption measurement method