Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Method of manufacturing a semiconductor device having a low leakage current










Image Number 11 for United States Patent #6514834.

A field oxide film is provided in the surface of a semiconductor substrate. An interlayer insulating film is provided on the semiconductor substrate so as to cover an active layer. A contact hole exposing the surface of the active layer is provided in the interlayer insulating film. A conductor fills the contact hole so as to be electrically connected to the surface of the active layer. The end portion of the field oxide film has a surface perpendicular with respect to the surface of the semiconductor substrate. As a result, a dynamic random access memory can be obtained which is improved so that leakage current is reduced, which in turn increases a hold time of information.








 
 
  Recently Added Patents
Satellite mounting pole
Liposomes with improved drug retention for treatment of cancer
Probe for ultrasound diagnostic apparatus
Method and apparatus for managing backup channel in multi-channel environment
Normalized contextual performance metric for the assessment of fatigue-related incidents
Image processing unit, image processing method and program
Account managing device, image processing system, and storage medium
  Randomly Featured Patents
Implement for setting sutures
Composition for treatment of skin and method for stabilizing the composition
Snow guard
Bow utilizing arcuate compression members to store energy
Grid block workpiece clamping apparatus
Pipe clip
Method of packaging and sterilizing a pharmaceutical product
Overhead wiring system
Anthrapyridone compounds, their production process and their use
Cleaning article comprising melamine foam sponge