Resources Contact Us Home
Method of manufacturing a semiconductor device having a low leakage current

Image Number 11 for United States Patent #6514834.

A field oxide film is provided in the surface of a semiconductor substrate. An interlayer insulating film is provided on the semiconductor substrate so as to cover an active layer. A contact hole exposing the surface of the active layer is provided in the interlayer insulating film. A conductor fills the contact hole so as to be electrically connected to the surface of the active layer. The end portion of the field oxide film has a surface perpendicular with respect to the surface of the semiconductor substrate. As a result, a dynamic random access memory can be obtained which is improved so that leakage current is reduced, which in turn increases a hold time of information.

  Recently Added Patents
Uni-directional transient voltage suppressor (TVS)
Radio communication system, transmission apparatus, reception apparatus, and radio communication method in radio communication
Nestable shallow container
Control device
MEMS structure and method for making the same
Prevention and treatment of osteoarthritis
Pointer display device, pointer display/detection method, pointer display/detection program and information apparatus
  Randomly Featured Patents
High efficiency, high resolution, real-time radiographic imaging system
Plasmodium falciparum antigens and methods of use
Methods and apparatus for bookmarking and annotating data in a log file
Tailings monitor for combine harvester
Disintegratable cigarette filter
Process for the manufacture of defluoromethane
Start flow measurement
Machinable preformed calcium phosphate bone substitute material implants