Resources Contact Us Home
Method of manufacturing a semiconductor device having a low leakage current

Image Number 11 for United States Patent #6514834.

A field oxide film is provided in the surface of a semiconductor substrate. An interlayer insulating film is provided on the semiconductor substrate so as to cover an active layer. A contact hole exposing the surface of the active layer is provided in the interlayer insulating film. A conductor fills the contact hole so as to be electrically connected to the surface of the active layer. The end portion of the field oxide film has a surface perpendicular with respect to the surface of the semiconductor substrate. As a result, a dynamic random access memory can be obtained which is improved so that leakage current is reduced, which in turn increases a hold time of information.

  Recently Added Patents
Container pack
Architectural panel with Tarwe and grass
Multi-radio coexistence
Systems and methods for generating a user profile based customized media guide with user-generated content and non-user-generated content
Process for improving the hydrolysis of cellulose in high consistency systems using one or more unmixed and mixed hydrolysis reactors
Using storage cells to perform computation
Power generating apparatus of renewable energy type and method of attaching and detaching blade
  Randomly Featured Patents
System and methods for deploying and invoking a distributed object model
Apparatus and/or device for personal hygiene
Tile cutter
Method and an arrangement for detecting and discharging misplaced boards at a separation elevator
System and method for closed loop decisionmaking in an automated care system
Camptothecin tetracyclic analogues, preparation, method, applications as medicines and pharmaceutical compositions containing them
High conformance oil recovery process
Device for treating the interior of body cavities with laser energy
Fluorinated triazine monomers
Infrared gas analyzer