Resources Contact Us Home
Method of manufacturing a semiconductor device having a low leakage current

Image Number 11 for United States Patent #6514834.

A field oxide film is provided in the surface of a semiconductor substrate. An interlayer insulating film is provided on the semiconductor substrate so as to cover an active layer. A contact hole exposing the surface of the active layer is provided in the interlayer insulating film. A conductor fills the contact hole so as to be electrically connected to the surface of the active layer. The end portion of the field oxide film has a surface perpendicular with respect to the surface of the semiconductor substrate. As a result, a dynamic random access memory can be obtained which is improved so that leakage current is reduced, which in turn increases a hold time of information.

  Recently Added Patents
Multiple input multiple output transceiver
Semiconductor device
Campanula plant named `PKMM03`
Method for driving electrophoretic display device, electrophoretic display device, and electronic device
Traffic signal mapping and detection
Mobile terminal based on W-CDMA system having receive diversity function and system thereof
Signal processing apparatus and methods
  Randomly Featured Patents
Optical head for reproducing data from first and second optical disks
Flexible tooling method and apparatus
Process for the purification of gamma interferon
Fluid coupling with a lock-up clutch
Process for accelerated drying of green wood
Intermediates for the preparation of phenylsulfonylurea herbicides and plant growth regulators
Variable electronic component
Agricultural piston bale press
Method of producing anisotropic ferrite magnet