Resources Contact Us Home
Method of manufacturing a semiconductor device having a low leakage current

Image Number 11 for United States Patent #6514834.

A field oxide film is provided in the surface of a semiconductor substrate. An interlayer insulating film is provided on the semiconductor substrate so as to cover an active layer. A contact hole exposing the surface of the active layer is provided in the interlayer insulating film. A conductor fills the contact hole so as to be electrically connected to the surface of the active layer. The end portion of the field oxide film has a surface perpendicular with respect to the surface of the semiconductor substrate. As a result, a dynamic random access memory can be obtained which is improved so that leakage current is reduced, which in turn increases a hold time of information.

  Recently Added Patents
Method and system for delivering and executing virtual container on logical partition of target computing device
Method of fabricating CIGS by selenization at high temperature
Wind driven generator for vehicles
Clostridium chauvoei polypeptide, DNA encoding the polypeptide and a vaccine comprising the polypeptide
Touch sensing technology
Method and device for accessing the documentation of an aircraft according to alarms generated therein
Benzimidazole inhibition of biofilm formation
  Randomly Featured Patents
Automotive vehicle radiator grille assembly
Swimwear garment incorporating resistance band
Detoxifying-medicinal emulsions
Reinforcing material comprising E-polycaprolactone and pulverized fuel ash
Sterile, heat sealable plastic bag
Fan duct for a window-mounted air conditioner
Method for production of material for composite article
Energy absorber for a vehicle bumper unit
Removal of scale and sludge in a steam generator of a fabric treatment appliance
Capacitive keyboard with position dependent reduced keying ambiguity