Resources Contact Us Home
Method of manufacturing a semiconductor device having a low leakage current

Image Number 11 for United States Patent #6514834.

A field oxide film is provided in the surface of a semiconductor substrate. An interlayer insulating film is provided on the semiconductor substrate so as to cover an active layer. A contact hole exposing the surface of the active layer is provided in the interlayer insulating film. A conductor fills the contact hole so as to be electrically connected to the surface of the active layer. The end portion of the field oxide film has a surface perpendicular with respect to the surface of the semiconductor substrate. As a result, a dynamic random access memory can be obtained which is improved so that leakage current is reduced, which in turn increases a hold time of information.

  Recently Added Patents
Methods, devices and computer program products providing for establishing a model for emulating a physical quantity which depends on at least one input parameter, and use thereof
Optical sensor and electronic apparatus
Method of fabricating crystal unit, crystal unit fabrication mask, and crystal unit package
Enhancing user experiences using aggregated device usage data
Inhibitor of casein kinase 1delta and casein kinase 1E
Tracking data eye operating margin for steady state adaptation
Optical modulation element
  Randomly Featured Patents
System and method for real time reservoir management
Apparatus for removing anode residue from anodes of electrolytic melt baths
Screen border
Wrist wallet with pocket
Amino-substituted pyrimidinyl derivatives and methods of use
Method for packaging of bulk goods into a unit-load package and a unit-load package for bulk goods
Process for repairing lead-in wires of electric light bulbs
Apparatus for mail transfer
Method of forming container with high-crystallinity sidewall and low-crystallinity base
Boxed leaf flexural pantographic mount for a magnetic transducing head assembly