Resources Contact Us Home Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE     Method of fabricating an ultra-thin fully depleted SOI device with T-shaped gate Image Number 4 for United States Patent #6509234. A method of forming a fully depleted semiconductor-on-insulator (SOI) field effect transistor (FET). The method includes forming a T-shaped gate electrode formed at least in part in a recess formed in a layer of semiconductor material and over a body region that is disposed between a source and a drain. The method includes spacing the gate electrode from the body by a gate dielectric made from a high-K material.       Recently Added Patents Gauge for spacing of cable railings Methods and materials for fabricating laminate nanomolds and nanoparticles therefrom Nutritive substance delivery container Combine harvester draper header with floor pan rearward of central draper Electronic device holder Outer frame drainage structure of concentrator type solar cell module Imaging devices, methods of forming same, and methods of forming semiconductor device structures   Randomly Featured Patents Spectacles with temple dual pivot rear vision elements Accomodating fragmentation with deterministic packet marking Apparatus and method for removing matter on a fluid surface of a tank Painting line for metal objects Nitride micro light emitting diode with high brightness and method of manufacturing the same Polycarboxylic acid concrete admixture Centrifuge bag-holding device with clamp assembly and uses thereof Financial transaction system and method Heat exchange control system Quinoxaline derivatives and their use for treating benign and malignant tumour disorders © 2006-2008 PatentGenius. All Rights Reserved.