Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Method of fabricating an ultra-thin fully depleted SOI device with T-shaped gate










Image Number 4 for United States Patent #6509234.

A method of forming a fully depleted semiconductor-on-insulator (SOI) field effect transistor (FET). The method includes forming a T-shaped gate electrode formed at least in part in a recess formed in a layer of semiconductor material and over a body region that is disposed between a source and a drain. The method includes spacing the gate electrode from the body by a gate dielectric made from a high-K material.








 
 
  Recently Added Patents
Apoptosis inductor extracted from potato, potato foodstuff containing the inductor, and processed product thereof
Process for the production of electric energy by the excitation and capture of electrons from ground or water sources
Analogue-to-digital converter
Tire for motorcycle
System and method of detecting and locating intermittent and other faults
Bottle
Apparatus and methods for color displays
  Randomly Featured Patents
Steam turbine having an exhaust-steam casing
Wood splitting machine with a threaded rotating cone
Pinball machine with moving feature
Game control pad
Method of assaying high molecular hyaluronic acid and kit of reagents for such assay
Transformer heat generating assembly
Selective exclusion of LSPs on a per-packet basis
Process for treating organic fibers
Device protection structure for preventing plasma charging damage and vertical cross talk
Auger car bearing support