Resources Contact Us Home
Method of fabricating an ultra-thin fully depleted SOI device with T-shaped gate

Image Number 4 for United States Patent #6509234.

A method of forming a fully depleted semiconductor-on-insulator (SOI) field effect transistor (FET). The method includes forming a T-shaped gate electrode formed at least in part in a recess formed in a layer of semiconductor material and over a body region that is disposed between a source and a drain. The method includes spacing the gate electrode from the body by a gate dielectric made from a high-K material.

  Recently Added Patents
Unified recovery
Representations of compressed video
Method of treating cancer using a survivin inhibitor
Grounding fitting
Agents for preventing and treating disorders involving modulation of the ryanodine receptors
Compositions, organisms, systems, and methods for expressing a gene product in plants using SCBV expression control sequences operable in monocots and dicots
Method and system for phase-sensitive magnetic resonance imaging
  Randomly Featured Patents
Internal gettering of oxygen in III-V compound semiconductors
Wagon canopy apparatus
Air freshener
Spontaneous topology discovery in a multi-node computer system
Photonic sensor particles and fabrication methods
Electrostatic chuck and production method therefor
Educational prosthesis device and method for using the same
Device for separating heavier impurities from solid bodies in fluid flow
Golf ball dimple structures with vortex generators
Effusion cell crucible with thermocouple