Resources Contact Us Home
Method of fabricating an ultra-thin fully depleted SOI device with T-shaped gate

Image Number 4 for United States Patent #6509234.

A method of forming a fully depleted semiconductor-on-insulator (SOI) field effect transistor (FET). The method includes forming a T-shaped gate electrode formed at least in part in a recess formed in a layer of semiconductor material and over a body region that is disposed between a source and a drain. The method includes spacing the gate electrode from the body by a gate dielectric made from a high-K material.

  Recently Added Patents
Methods and systems for flicker correction
Multi-chip package with a supporting member and method of manufacturing the same
Authorization method for location based services
Linerless labels
Digital fine delay processing
Address generation unit for accessing a multi-dimensional data structure in a desired pattern
Tricyclic inhibitors of kinases
  Randomly Featured Patents
Microwave cooking device with improved venting configuration
Screen generation for halftone screening of images using scan line segments of oversized screen scan lines
Semiconductor device having a shielding conductor
Thermal imaging apparatus
Method of preparing glass batch
Process and system for providing name service scoping behavior in java object-oriented environment
Process for the production of trihydroxy-and/or alkoxy-hydroxybenzenes
Polishing method, polishing pad, and polishing system
Method and apparatus using digital credentials and other electronic certificates for electronic transactions
Water soluble wetting agent for pesticide formulations