Resources Contact Us Home
Method of fabricating an ultra-thin fully depleted SOI device with T-shaped gate

Image Number 4 for United States Patent #6509234.

A method of forming a fully depleted semiconductor-on-insulator (SOI) field effect transistor (FET). The method includes forming a T-shaped gate electrode formed at least in part in a recess formed in a layer of semiconductor material and over a body region that is disposed between a source and a drain. The method includes spacing the gate electrode from the body by a gate dielectric made from a high-K material.

  Recently Added Patents
Bird deterrent
Audio conversation apparatus
Irreversible thermochromic ink compositions
Optical modulator module
Portable computer
Multiple carrier compression scheme
  Randomly Featured Patents
Foaming surfactant compositions
Embedded heat dissipating device mounting structure
Method for achieving gas dynamic lasing
Variable pitch track
Negative bias critical dimension trim
Condenser receiver with insert
System including unified beamsplitter and parallel reflecting element, and retroreflecting component
Shower curtain hook
SMR storage device with user controls and access to status information and parameter settings
Stable substrate structure for a wide swath nozzle array in a high resolution inkjet printer