Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Method of fabricating an ultra-thin fully depleted SOI device with T-shaped gate










Image Number 4 for United States Patent #6509234.

A method of forming a fully depleted semiconductor-on-insulator (SOI) field effect transistor (FET). The method includes forming a T-shaped gate electrode formed at least in part in a recess formed in a layer of semiconductor material and over a body region that is disposed between a source and a drain. The method includes spacing the gate electrode from the body by a gate dielectric made from a high-K material.








 
 
  Recently Added Patents
Portable stand for computer
Movable assemblies for an image reader unit and a cover unit in an image formation apparatus
Thermally efficient busway
Method for superconducting connection between MgB2 superconducting wires via a MgB2 matrix made from a boron powder compressed element infiltrated with Mg
Scalable packet processing systems and methods
Flame retardant thermoplastic elastomers
System and method for distributed security
  Randomly Featured Patents
Reboring fixture and method
Computer power management system
Air inlet assistor for a vehicle engine
Rubbish bin lid
Container safety latch
Apparatus to replace crimp-mounted solenoids on starter motors
Ophthalmic imaging apparatus and control method thereof
System and method for processing connection from macro cellular base station to mini type base station
Method of making a circuit board
Battery Handle