Resources Contact Us Home
Post etch clean sequence for making a semiconductor device

Image Number 3 for United States Patent #6465358.

An improved method of forming a semiconductor device is described. The method comprises forming a dielectric layer on a substrate, forming a photoresist layer on the dielectric layer, then patterning the photoresist layer to define a region to be etched. After forming an etched region within the dielectric layer, the photoresist layer is removed and the etched region is cleaned. The etched region is cleaned by applying a buffered oxide etch dip, followed by an amine based dip.

  Recently Added Patents
Methods and systems for creating a tail risk hedge index and trading derivative products based thereon
Pet urn enclosure
Data processing apparatus including reconfigurable logic circuit
Method of and apparatus for recording motion picture, which generate encoded data with higher compression efficiency using a motion vector similarity
Multi-carrier operation for wireless systems
Flexible lighting devices
Prevention and treatment of oxidative stress disorders by gluthathione and phase II detoxification enzymes
  Randomly Featured Patents
Adaptive temporal modulation of periodically varying light sources
Randomized code acquisition
Exhaust gas recirculation system for a diesel engine
Helical compression spring
Self-powered long-life occupancy sensors and sensor circuits
Method for treating a water-containing waste oil
Location-based information determination
Modular limb segment connector
Activated ammonium nitrate explosive composition
Apparatus and method for upgrading program