Resources Contact Us Home
Post etch clean sequence for making a semiconductor device

Image Number 3 for United States Patent #6465358.

An improved method of forming a semiconductor device is described. The method comprises forming a dielectric layer on a substrate, forming a photoresist layer on the dielectric layer, then patterning the photoresist layer to define a region to be etched. After forming an etched region within the dielectric layer, the photoresist layer is removed and the etched region is cleaned. The etched region is cleaned by applying a buffered oxide etch dip, followed by an amine based dip.

  Recently Added Patents
Image processing apparatus, image processing method, and recording medium
Touch display apparatus and backlight module
Method for manufacturing a porous synthetic diamond material
Music theory device
Synergistic welding system
Safety sign for a vehicle
Solar cell module manufacturing device and solar cell module manufacturing method
  Randomly Featured Patents
Lancet device
Transreflector antenna for wireless communication system
Window awning system
Fuel metering system proportional bypass valve error compensation system and method
Optical modulator
Pop-open disposable debris collector
Treating instrument for use with an endoscope
Apparatus for assaying viscosity changes in fluid samples and method of conducting same
Scarf construction
In-vehicle key check system having check history memory