Resources Contact Us Home
High-purity copper sputtering targets and thin films

Image Number 2 for United States Patent #6451135.

There is provided copper targets for sputtering capable of forming a deposition film with low electric resistance indispensable for high-speed operation elements and also with excellent thickness uniformity, and such thin copper films. A high-purity copper sputtering target is characterized by comprising up to 0.1 ppm each Na and K, up to 1 ppm each Fe, Ni, Cr, Al, Ca, Mg, up to 5 ppm each carbon and oxygen, up to 1 ppb each U and Th, and, excluding gaseous constituents, more than 99.999% copper. Preferably the average grain size on the sputter surface is 250 .mu.m or below, with its dispersion thin plus or minus 20%. I(111)/I(200) of X-ray diffraction peak intensity on the sputter plane is at least 2.4 with its dispersion within plus or minus 20%.

  Recently Added Patents
Image processing apparatus, image forming system, and computer-readable storage medium
Submersible remote smoke sensor
Packaging article
Method for treating oncological diseases
Phase-amplitude 3-D stereo encoder and decoder
Apparatus and method of managing radio bearer in wireless communication system
Method for using directing cells for specific stem/progenitor cell activation and differentiation
  Randomly Featured Patents
Fast-acting valve
Paramagnetic and active analogue (EMP-2) of melanocyte stimulating hormone containing amino acid-type stable free radical
Charged particle beam writing apparatus and charged particle beam writing method
Chest of drawers
Lithographic system, device manufacturing method, setpoint data optimization method, and apparatus for producing optimized setpoint data
Integrated reflector lamp
Titanium alloy microstructural refinement method and high temperature, high strain rate superplastic forming of titanium alloys
Refrigerating compressor with breakaway pulley portion
Underwater light
Sealant based on mixture of unsaturated and hydrogenated block copolymers