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Magnetic memory device

Image Number 11 for United States Patent #6438025.

The invention described herein defines a system and a method for selectively controlling the sensitivity of a region of a magnetoresistive element to an incident magnetic field, by applying an external magnetic field to the magnetoresistive element. A number of applications to non-volatile data storage are described, as is a magnetic sweep element based on a FET structure. Finally, the storage media and recording modes (in-plane vs. perpendicular) best suited to the proposed applications are analyzed, and the desired or optimal characteristics of the proposed devices are discussed.

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