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Reverse conducting thyristor










Image Number 7 for United States Patent #6388276.

Providing a reverse conducting thyristor, wherein a diode and a GTO thyristor are reverse parallel-connected, with which it is possible to reduce a surface area size of a separation portion and avoid variations in insulation characteristics.A separation portion between a diode and a GTO thyristor includes a semiconductor substrate of a first conductivity type, a thin film region of a second conductivity type formed in a major surface of the semiconductor substrate, and a guard ring region of the second conductivity type.








 
 
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