Resources Contact Us Home
High pressure N2 RTA process for TiS2 formation

Image Number 7 for United States Patent #6348413.

In one aspect of the present invention, a method of forming a layer of silicide on a surface of a silicon-containing structure surface that is separated from a first structure by a second structure is provided. The method includes the steps of forming a layer of silicide-forming material on the surface of the silicon-containing structure, and the first and second structures. The layer of silicide-forming material is annealed in an ambient containing a nitrogen bearing species at a pressure greater than about one atmosphere to form the layer of silicide on the surface of the silicon-containing structure. The nitrogen bearing species reacts with the silicide-forming material to retard the formation of silicide on the third structure. The method reduces the potential for silicide bridging between, for example, the gate and source/drain regions of a transistor during silicide contact formation.

  Recently Added Patents
Machine shop including computer system that interfaces with different legacy servers
Generating a network map
Structural plasticity in spiking neural networks with symmetric dual of an electronic neuron
Generating package profiles in software package repositories using selective subsets of packages
Automatic misalignment balancing scheme for multi-patterning technology
Encryption using alternate authentication key
Automated user interface adjustment
  Randomly Featured Patents
Wearable transmitter with optical tamper detection
Lithographic printing plate having high chemical resistance
Apparatus and method for of register changes during execution of a micro instruction tracking sequence
Process for aqueous milling of quinacridone pigments
Heat sink
Electronic stethoscope chestpiece
Method and apparatus for eye position registering and tracking
Method of manufacturing semiconductor device