Resources Contact Us Home
High pressure N2 RTA process for TiS2 formation

Image Number 7 for United States Patent #6348413.

In one aspect of the present invention, a method of forming a layer of silicide on a surface of a silicon-containing structure surface that is separated from a first structure by a second structure is provided. The method includes the steps of forming a layer of silicide-forming material on the surface of the silicon-containing structure, and the first and second structures. The layer of silicide-forming material is annealed in an ambient containing a nitrogen bearing species at a pressure greater than about one atmosphere to form the layer of silicide on the surface of the silicon-containing structure. The nitrogen bearing species reacts with the silicide-forming material to retard the formation of silicide on the third structure. The method reduces the potential for silicide bridging between, for example, the gate and source/drain regions of a transistor during silicide contact formation.

  Recently Added Patents
Aisle barrier
Wireless communication system, associated methods and data structures
Sample chamber for laser ablation inductively coupled plasma mass spectroscopy
Method of manufacturing crystalline silicon solar cells with improved surface passivation
Method and system for providing status of a machine
Heteroleptic iridium complexes as dopants
Network traffic demotion
  Randomly Featured Patents
Water-dispersible coatings containing boron nitride for steel casting dies
Output stage, amplifier control loop and use of the output stage
Functional device and multi-component multi-phase type polymeric shaped material
Control device for hybrid vehicle
Magnetic tape cassette
System for assembling electronic component kits
Method of transmitting a high-priority message in a lighting control system
Process for leaching of precious metals
Structure of card insertion port and method of mounting card insertion port member
Rare earth sesquisulfide compositions comprising alkali/alkaline earth metal values