Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
High pressure N2 RTA process for TiS2 formation










Image Number 7 for United States Patent #6348413.

In one aspect of the present invention, a method of forming a layer of silicide on a surface of a silicon-containing structure surface that is separated from a first structure by a second structure is provided. The method includes the steps of forming a layer of silicide-forming material on the surface of the silicon-containing structure, and the first and second structures. The layer of silicide-forming material is annealed in an ambient containing a nitrogen bearing species at a pressure greater than about one atmosphere to form the layer of silicide on the surface of the silicon-containing structure. The nitrogen bearing species reacts with the silicide-forming material to retard the formation of silicide on the third structure. The method reduces the potential for silicide bridging between, for example, the gate and source/drain regions of a transistor during silicide contact formation.








 
 
  Recently Added Patents
Vehicle seating system and method for reducing fatigue with changing actuator movement
Switching device, switch control method, and storage system
Cross-linkable compositions
Methods and systems for managing print device supplies using cloud administration system configured for chemical signature tracking
Storage system with LU-setting function
Memory device and method for repairing a semiconductor memory
Timing and cell specific system information handling for handover in evolved UTRA
  Randomly Featured Patents
Fabricated wood beam
Sprayer
Method of manufacture of blade members for wire stripping device
Infrared light source
Nanoelectronic structure and method of producing such
Portion of a pivot mount
Watch
Internal focusing type telephoto lens
Method and composition for treating immune disorders, inflammation and chronic infections
Horizontal continuous casting device