Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
High pressure N2 RTA process for TiS2 formation










Image Number 7 for United States Patent #6348413.

In one aspect of the present invention, a method of forming a layer of silicide on a surface of a silicon-containing structure surface that is separated from a first structure by a second structure is provided. The method includes the steps of forming a layer of silicide-forming material on the surface of the silicon-containing structure, and the first and second structures. The layer of silicide-forming material is annealed in an ambient containing a nitrogen bearing species at a pressure greater than about one atmosphere to form the layer of silicide on the surface of the silicon-containing structure. The nitrogen bearing species reacts with the silicide-forming material to retard the formation of silicide on the third structure. The method reduces the potential for silicide bridging between, for example, the gate and source/drain regions of a transistor during silicide contact formation.








 
 
  Recently Added Patents
RPM Controlled Wind Power Generation System
Cooler
Patterned birefringent product
Method and apparatus for triggering expiration of a data tag device
Personal warming apparatus
Methods and apparatus for map detection with reduced complexity
Method and system for selecting a target with respect to a behavior in a population of communicating entities
  Randomly Featured Patents
Driving circuit for liquid crystal display device
Corneal endothelial cell photographing apparatus
Self-supporting level measurement device
Liquid leak detector
Absolute address bits kept in branch history table
Screed unit for asphalt paving machine
Semiconductor integrated circuit device, production and operation method thereof
Liquid crystal display and method of manufacturing the same
Liquid measurement system and shared interface apparatus for use therein
Antigen recognized by MCA 16-88