Resources Contact Us Home
High pressure N2 RTA process for TiS2 formation

Image Number 7 for United States Patent #6348413.

In one aspect of the present invention, a method of forming a layer of silicide on a surface of a silicon-containing structure surface that is separated from a first structure by a second structure is provided. The method includes the steps of forming a layer of silicide-forming material on the surface of the silicon-containing structure, and the first and second structures. The layer of silicide-forming material is annealed in an ambient containing a nitrogen bearing species at a pressure greater than about one atmosphere to form the layer of silicide on the surface of the silicon-containing structure. The nitrogen bearing species reacts with the silicide-forming material to retard the formation of silicide on the third structure. The method reduces the potential for silicide bridging between, for example, the gate and source/drain regions of a transistor during silicide contact formation.

  Recently Added Patents
Memory management configuration
Liquid crystal display device and driving method thereof
Light powered hearing aid
Method and system for tracking mobile electronic devices while conserving cellular network resources
Polymers derived from benzobis(silolothiophene) and their use as organic semiconductors
Methods, systems, and products for searching interactive menu prompting systems
Anti-fake battery pack and identification system thereof
  Randomly Featured Patents
Radiation image pickup apparatus and driving method therefor
Continuously operating prepress or finishing press
Sheet deceleration apparatus and method
Handle and pull-out part on cupboards and shelves
Torsion spring damper
Method of preventing virus increase in plants
Method of forming a consolidated fibrous structure
Receiver for receiving signal containing clock information and data information, and clock-embedded interface method
Mobile phone
Lowering collision avoidance device of crane