Resources Contact Us Home
High pressure N2 RTA process for TiS2 formation

Image Number 7 for United States Patent #6348413.

In one aspect of the present invention, a method of forming a layer of silicide on a surface of a silicon-containing structure surface that is separated from a first structure by a second structure is provided. The method includes the steps of forming a layer of silicide-forming material on the surface of the silicon-containing structure, and the first and second structures. The layer of silicide-forming material is annealed in an ambient containing a nitrogen bearing species at a pressure greater than about one atmosphere to form the layer of silicide on the surface of the silicon-containing structure. The nitrogen bearing species reacts with the silicide-forming material to retard the formation of silicide on the third structure. The method reduces the potential for silicide bridging between, for example, the gate and source/drain regions of a transistor during silicide contact formation.

  Recently Added Patents
Serving base station selection based on backhaul capability
Method and apparatus for providing charging status information to subscriber of communication service
Case for electronic device
Inter-carrier communications for multimedia-message delivery
Image forming apparatus and job request control method instructed by authenticated users
Dynamic data filtering system and method
  Randomly Featured Patents
Biological enhancement of hydrocarbon extraction
Optional apparatus for image forming apparatus
Display device and method for manufacturing the same
Tubing harness for extracorporeal treatment
Multilayer ceramic package with center ground via for size reduction
Method for the fabrication of devices including polymeric materials
Filter membrane
Electrode structures and electrooptic light gate systems
Fluid cooled burner
Meat scraping tool