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Magnetic tunnel junction elements and their fabrication method










Image Number 5 for United States Patent #6341053.

The present invention provides a magnetic tunnel junction device for an external magnetic field sensor. The device comprises a stack of multi-layers, which include a first antiferromagnetic pinning layer, a ferromagnetic free layer, a tunneling barrier layer, a ferromagnetic pinned layer, and a second antiferromagnetic pinning layer. The first pinning layer has a first pinning field, which pins a magnetization of the free layer in a track width direction. The second pinning layer has a second pinning field, which pins a magnetization of the pinned layer in a direction in the plane of the stacked layers of the magnetic tunnel junction, along the applied external magnetic field direction.








 
 
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