Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Split gate flash memory device with source line










Image Number 11 for United States Patent #6326662.

A method of forming split gate electrode MOSFET devices comprises the following steps. Form a tunnel oxide layer over a semiconductor substrate. Form a floating gate electrode layer over the tunnel oxide layer. Form a masking cap over the floating gate electrode layer. Pattern gate electrode stacks formed by the tunnel oxide layer and the floating gate electrode layer in the pattern of the masking cap. Pattern source line slots in the center of the gate electrode stacks down to the substrate. Form source regions at the base of the source lines slots. Form intermetal dielectric and control gate layers over the substrate covering the stacks. Pattern the intermetal dielectric and control gate layers into adjacent mirror image split gate electrode pairs. Form self-aligned drain regions.








 
 
  Recently Added Patents
Lithographic apparatus and device manufacturing method
Image forming apparatus
Motor assembly
System and method for the heterologous expression of polyketide synthase gene clusters
Flexible circuit routing
Systems and methods for cryopreservation of cells
Electronic device with multi-orientation
  Randomly Featured Patents
Wire catalyst for hydrogenation/dehydrogenation reaction and manufacturing method therefor
Device for inverting the direction of rotation of a driven shaft
Fungicide mixtures
Method of reducing or preventing malodour
Neck support
Quick-connect tube coupling
Bio-sensor and method of manufacturing the same
Developer, development method, development device and its elements, and image-forming device
Method of playing a baccarat-type card game
Apparatus for treating an article