Resources Contact Us Home
Split gate flash memory device with source line

Image Number 11 for United States Patent #6326662.

A method of forming split gate electrode MOSFET devices comprises the following steps. Form a tunnel oxide layer over a semiconductor substrate. Form a floating gate electrode layer over the tunnel oxide layer. Form a masking cap over the floating gate electrode layer. Pattern gate electrode stacks formed by the tunnel oxide layer and the floating gate electrode layer in the pattern of the masking cap. Pattern source line slots in the center of the gate electrode stacks down to the substrate. Form source regions at the base of the source lines slots. Form intermetal dielectric and control gate layers over the substrate covering the stacks. Pattern the intermetal dielectric and control gate layers into adjacent mirror image split gate electrode pairs. Form self-aligned drain regions.

  Recently Added Patents
Pyridyldiamido transition metal complexes, production and use thereof
Lubricating oil compositions
Debris tray
Method of hydrothermal liquid phase sintering of ceramic materials and products derived therefrom
Method for treating hyperglycemia
Particle-loaded membrane for solid-phase-extraction and method for performing SALDI-MS analysis of an analyte
Method and apparatus for radio antenna frequency tuning
  Randomly Featured Patents
System and methods for automatically distributing a particular shared data object through electronic mail
System for producing tomographic image by optical tomography
Lever type connector
Printing system, printing apparatus and printing apparatus control program
Method for electronically measuring size of internal void in electrically conductive lead
Helicopter propeller
Gel strength enhancer for gelatin compositions including an oxidized polysaccharide
Fabrication process for a 1-transistor EEPROM memory device capable of low-voltage operation
Pontoon frame and adjustable motor mount
Anti-lash gear mechanism