Resources Contact Us Home
Split gate flash memory device with source line

Image Number 11 for United States Patent #6326662.

A method of forming split gate electrode MOSFET devices comprises the following steps. Form a tunnel oxide layer over a semiconductor substrate. Form a floating gate electrode layer over the tunnel oxide layer. Form a masking cap over the floating gate electrode layer. Pattern gate electrode stacks formed by the tunnel oxide layer and the floating gate electrode layer in the pattern of the masking cap. Pattern source line slots in the center of the gate electrode stacks down to the substrate. Form source regions at the base of the source lines slots. Form intermetal dielectric and control gate layers over the substrate covering the stacks. Pattern the intermetal dielectric and control gate layers into adjacent mirror image split gate electrode pairs. Form self-aligned drain regions.

  Recently Added Patents
For a given cell in a spreadsheet, evaluating an unlimited number of conditional formatting rules and applying multiple corresponding formats to the cell
Inductive signal transfer system for computing devices
Carrier sense multiple access (CSMA) protocols for power line communications (PLC)
Position pointer, variable capacitor and inputting apparatus
Fiber optic cables and assemblies for fiber toward the subscriber applications
Motor drive component verification system and method
Escalating data backup protection in response to a failure in a cluster of nodes
  Randomly Featured Patents
Ribbon filter apparatus
Lighting fixture
Processing a printed wiring board by single bath electrodeposition
Hatch assembly
Reorientation port
Apparatus and method for sensing distance
Method of forming an insulating capping layer for a copper metallization layer
Multistage system for separating gas by adsorption
Super resolution optical disc
Housing for coin operated constructions