Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Process for manufacturing a semiconductor device










Image Number 7 for United States Patent #6319797.

An HSQ film 4 is formed on a silicon oxide film 1 and the film 4 is subject to B.sub.2 H.sub.6 plasma irradiation, to form a boron-implanted region 5. After forming a plasma TEOS film 6 on the region, a concave 8 is formed with a hydrofluoric acid-containing etchant, while wet-etching is stopped on the boron-implanted region 5. Then, the exposed HSQ film 4 in the bottom of the concave 8 is dry-etched to form a contact hole 9 reaching an Al interconnection 2. Then, the contact hole 9 is filled with an upper interconnection material to provide a multilayered interconnection structure.








 
 
  Recently Added Patents
Global alignment for high-dynamic range image generation
SRB enhancement on HS-DSCH during cell change
Systems and methods for updating a data store using a transaction store
Controller for soldering iron
Chair
Systems and methods for excluding undesirable network transactions
Methods and systems for automated backups and recovery on multi-os platforms using controller-based snapshots
  Randomly Featured Patents
Air UV disinfection device and method
Call selecting apparatus for preferentially connecting emergency message calls
Process gas introduction and channeling system to produce a profiled semiconductor layer
Pressure limiting valve with reduced differential area
Device for fixing an air-gap winding of a dynamo-electric machine
Improved outdoor umbrella
Connecting circuit for an oxygen probe and method for checking for a correct probe connection
Tracheal tube sensor disposed on permeable membrane
Technique for separating solids from drilling fluids
Device for the prevention of collateral fibular ligament injuries