Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Process for manufacturing a semiconductor device










Image Number 6 for United States Patent #6319797.

An HSQ film 4 is formed on a silicon oxide film 1 and the film 4 is subject to B.sub.2 H.sub.6 plasma irradiation, to form a boron-implanted region 5. After forming a plasma TEOS film 6 on the region, a concave 8 is formed with a hydrofluoric acid-containing etchant, while wet-etching is stopped on the boron-implanted region 5. Then, the exposed HSQ film 4 in the bottom of the concave 8 is dry-etched to form a contact hole 9 reaching an Al interconnection 2. Then, the contact hole 9 is filled with an upper interconnection material to provide a multilayered interconnection structure.








 
 
  Recently Added Patents
System and method for distributed security
Transferases and oxidoreductases, nucleic acids encoding them and methods for making and using them
Image capture system and method
Ice tray for refrigerator
Phospholipid-based powders for drug delivery
Peer-to-peer method of deploying and managing executable code and associated plug-ins
Method and system for producing fluoride gas and fluorine-doped glass or ceramics
  Randomly Featured Patents
Operation controller for electronic computer
Apparatus for the diagnosis of body structures into which a gammaemitting radioactive isotope has been introduced
Learning system and method based on review
Multi-channel pipelined signal converter
Masonry block
Handle
Frictional support pad and utility belt
Device for preventing infant colic
Fixed base assembly of mobile phone
Cabinet and hutch interface