Resources Contact Us Home
Process for manufacturing a semiconductor device

Image Number 6 for United States Patent #6319797.

An HSQ film 4 is formed on a silicon oxide film 1 and the film 4 is subject to B.sub.2 H.sub.6 plasma irradiation, to form a boron-implanted region 5. After forming a plasma TEOS film 6 on the region, a concave 8 is formed with a hydrofluoric acid-containing etchant, while wet-etching is stopped on the boron-implanted region 5. Then, the exposed HSQ film 4 in the bottom of the concave 8 is dry-etched to form a contact hole 9 reaching an Al interconnection 2. Then, the contact hole 9 is filled with an upper interconnection material to provide a multilayered interconnection structure.

  Recently Added Patents
Method of manufacturing semiconductor device
System and method for outputting virtual textures in electronic devices
System and apparatus for control of published content
Methods, systems, and products for providing communications services
Systems and methods for electronic verification of vehicle insurance coverage
Method and apparatus for managing backup channel in multi-channel environment
  Randomly Featured Patents
Distance stick
Living body measurement apparatus
Jet-propulsion personal watercraft
Catalytic cracking of ethers to 1-olefins
Enhancements to ion mobility spectrometers
Highly stable asymmetric SRAM cell
Liquid crystal alignment using inkjet printed polymers
Hand-grip accessory
Process and apparatus for compatible wet and dry paper signal recording
Headlight for vehicle