Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Process for manufacturing a semiconductor device










Image Number 5 for United States Patent #6319797.

An HSQ film 4 is formed on a silicon oxide film 1 and the film 4 is subject to B.sub.2 H.sub.6 plasma irradiation, to form a boron-implanted region 5. After forming a plasma TEOS film 6 on the region, a concave 8 is formed with a hydrofluoric acid-containing etchant, while wet-etching is stopped on the boron-implanted region 5. Then, the exposed HSQ film 4 in the bottom of the concave 8 is dry-etched to form a contact hole 9 reaching an Al interconnection 2. Then, the contact hole 9 is filled with an upper interconnection material to provide a multilayered interconnection structure.








 
 
  Recently Added Patents
Semiconductor device
Jet pump and reactor
Agent for expelling parasites in humans, animals or birds
System and method for efficient association of a power outlet and device
Electronic hand-held device
High voltage fast recovery trench diode
Therapeutic vitamin D sun-protecting formulations and methods for their use
  Randomly Featured Patents
Device or apparatus for manipulating matter
Cosmetic applicator
Cutter drive vibration dampening system
Filter arrangement implementing a least squares method utilizing rotation matrices
Medical coupling system
Surface flaw detection system to facilitate nondestructive inspection of a component and methods of assembling the same
Device for blocking the rotary movement of a steering column
Fluorokinetic analysis of diffusion from a vessel
Shoe upper
Cylindrical receptacle of fiber-reinforced plastic and method of manufacturing a receptacle