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Method of fabricating nanoscale structures

Image Number 3 for United States Patent #6300221.

A method includes forming a spacer mask having a defined edge over a portion of a substrate, and alternatively conformally depositing over a portion of a substrate including the spacer mask a predetermined member of at least a first material and a second material. In one aspect, the first material and the second material have a different etch rate for a predetermined etchant. The method also includes forming a free-standing spacer comprising the first material and the second material having a width equivalent to the thickness of one of a layer of the first material and the second material.

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