Image Number 10 for United States Patent #6294425.
Methods of forming integrated circuit capacitors include forming a first electrically conductive layer on a semiconductor substrate and forming a first electrically insulating layer on the first electrically conductive layer. The first electrically insulating layer and the first electrically conductive layer are then patterned to define an opening in the first electrically insulating layer and expose a sidewall of the first electrically conductive layer. A second electrically conductive layer is then electroplated into the opening, using the exposed sidewall of the first electrically conductive layer as an electroplating seed. The patterned first electrically insulating layer and at least a portion of the patterned first electrically conductive layer are then removed to define a first capacitor electrode as the electroplated second electrically conductive layer. A capacitor dielectric layer is then formed on the first capacitor electrode. A complete capacitor structure is then provided by forming a second capacitor electrode on the capacitor dielectric layer, opposite the first capacitor electrode.
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