Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Etch barrier structure of a semiconductor device and method for fabricating the same










Image Number 3 for United States Patent #6262467.

A semiconductor device is disclosed, together with a fabricating method therefor. The semiconductor device has an etch barrier structure, made with SiN or SiON, which is formed on an element-isolating region alongside an active region. Although there is an alignment error which causes the element-isolating region to be exposed, the etch barrier structure protects the element-isolating region from being etched when carrying out the etching processes for contact holes in a semiconductor memory cell. Thus, while preventing the deterioration of element-isolation properties, the etch barrier structure can affords a larger allowable alignment error in the etching processes for contact holes, so it is possible to make a small active region and thus, highly integrate semiconductor devices.








 
 
  Recently Added Patents
Method and system for detecting target objects
Nanowire structured photodiode with a surrounding epitaxially grown P or N layer
Distortion compensation device, distortion compensation method, and radio transmitter
Calibration of quadrature imbalances using wideband signals
Plasmon generator includes three metal layers for thermally-assisted magnetic recording
Self-assembled, micropatterned, and radio frequency (RF) shielded biocontainers and their uses for remote spatially controlled chemical delivery
Computer network running a distributed application
  Randomly Featured Patents
Optical processor
Faucet
Precision honing device
Double lumen dilatation catheter
Bottle
Paint brush handle
Image forming apparatus
Covering device, and image reading apparatus equipped with the covering device
Ocular gene therapy
Analog television broadcast signal receiver