Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
GAN group crystal base member having low dislocation density, use thereof and manufacturing methods thereof










Image Number 2 for United States Patent #6225650.

A GaN group crystal base member comprising a base substrate, a mask layer partially covering the surface of said base substrate to give a masked region, and a GaN group crystal layer grown thereon to cover the mask layer, which is partially in direct contact with the non-masked region of the base substrate, use thereof for a semiconductor element, manufacturing methods thereof and a method for controlling a dislocation line. The manufacturing method of the present invention is capable of making a part in the GaN group crystal layer, which is above a masked region or non-masked region, have a low dislocation density.








 
 
  Recently Added Patents
Method of generating integrated circuit model
Processing financial documents
MEMS structure and method for making the same
Pharmaceutical powder compositions
Fabrication of thin pellicle beam splitters
System and method for terminating communication sessions with roaming mobile devices
Light-emitting element, light-emitting device, and electronic device
  Randomly Featured Patents
Highly dispersible reinforcing polymeric fibers
Semiconductor device having a passivation layer
Bismuth titanium silicon oxide, bismuth titanium silicon oxide thin film, and method for forming the thin film
Cutting insert
Electro-magnetically operated valve devices
Coating agent for plastic films
Method and apparatus for providing noise immunity for a binary signal path on a chip
Optical data bus having collision detection capability
Catalyst for hydrotreating carbonaceous liquids
Dynamic cervical plate