Resources Contact Us Home
GAN group crystal base member having low dislocation density, use thereof and manufacturing methods thereof

Image Number 2 for United States Patent #6225650.

A GaN group crystal base member comprising a base substrate, a mask layer partially covering the surface of said base substrate to give a masked region, and a GaN group crystal layer grown thereon to cover the mask layer, which is partially in direct contact with the non-masked region of the base substrate, use thereof for a semiconductor element, manufacturing methods thereof and a method for controlling a dislocation line. The manufacturing method of the present invention is capable of making a part in the GaN group crystal layer, which is above a masked region or non-masked region, have a low dislocation density.

  Recently Added Patents
Wireless enclosure
Method and CTDevice for computer tomographic spiral scanning of a patient
Plants and seeds of corn variety CV778791
Test framework of visual components in a multitenant database environment
Plants and seeds of hybrid corn variety CH514730
Beverage container lid
Method of creating exercise routes for a user and related personal navigation device
  Randomly Featured Patents
Implantable device for treating atrial fibrillation and method of using same
Clamping device for clamping an optical disc onto a drive spindle
Filter and method of treating tobacco smoke to reduce materials harmful to health
Article comprising a wavelength-stabilized semiconductor laser
Method and apparatus for substrate defect testing by surface illumination
Cooling bulk stored food grains
Herb container
Package, in particular, a receptacle, made of deep-drawn material
Testing device and method for viscosified fluid containing particulate material
Method of delivering a telephone number associated with a telephone subscription, and telephone sets and mobile telephones implementing the method