Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
GAN group crystal base member having low dislocation density, use thereof and manufacturing methods thereof










Image Number 2 for United States Patent #6225650.

A GaN group crystal base member comprising a base substrate, a mask layer partially covering the surface of said base substrate to give a masked region, and a GaN group crystal layer grown thereon to cover the mask layer, which is partially in direct contact with the non-masked region of the base substrate, use thereof for a semiconductor element, manufacturing methods thereof and a method for controlling a dislocation line. The manufacturing method of the present invention is capable of making a part in the GaN group crystal layer, which is above a masked region or non-masked region, have a low dislocation density.








 
 
  Recently Added Patents
System for and method of remotely auditing inventoried assets
Highly stable electrolytic water with reduced NMR half line width
Navigation apparatus, search result display method, and graphical user interface
Electronic device with a screen
Developing cartridge
Selecting input/output components of a mobile terminal
Trimming circuit and semiconductor device
  Randomly Featured Patents
Method of encapsulating an integrated circuit using a punched metal grid attached to a perforated dielectric strip
Coconjugates of OMPC, HIV related peptides and anionic moieties
Fan for a milk frother
Cold water ozone disinfection
Heat-sealable propylene-based polymer composition, heat-sealable film, and uses thereof
Cap with a pliable visor
Utility routing system for modular panels
Interpolating operation method and apparatus for color image signals
Azeotrope-like compositions of tetrafluoropropene and trifluoroiodomethane
Power circuit and liquid crystal display having the same