Resources Contact Us Home
GAN group crystal base member having low dislocation density, use thereof and manufacturing methods thereof

Image Number 2 for United States Patent #6225650.

A GaN group crystal base member comprising a base substrate, a mask layer partially covering the surface of said base substrate to give a masked region, and a GaN group crystal layer grown thereon to cover the mask layer, which is partially in direct contact with the non-masked region of the base substrate, use thereof for a semiconductor element, manufacturing methods thereof and a method for controlling a dislocation line. The manufacturing method of the present invention is capable of making a part in the GaN group crystal layer, which is above a masked region or non-masked region, have a low dislocation density.

  Recently Added Patents
Depth estimation apparatus and method
Method and composition for hyperthermally treating cells
Temporary protective cover for an exposed junction box
System and method for a TCP mapper
HYR1 as a target for active and passive immunization against Candida
Device to control force required to depress accelerator pedal
Antibody recognizing turn structure in amyloid .beta.
  Randomly Featured Patents
Modular power supply and modular interconnect system for portable electronic equipment
Laser scanning optical system
Rotor for a combine
Blood components collector unit
Method of making a semiconductor diode
Display for radars or sonars
Method of an apparatus for determining working original point for multi-joint manipulator
Method and arrangement for removing leading and trailing ends from rapidly moving rolled material
Fixture for system for processing fiber optic connectors
Microbellows actuator