Resources Contact Us Home
GAN group crystal base member having low dislocation density, use thereof and manufacturing methods thereof

Image Number 2 for United States Patent #6225650.

A GaN group crystal base member comprising a base substrate, a mask layer partially covering the surface of said base substrate to give a masked region, and a GaN group crystal layer grown thereon to cover the mask layer, which is partially in direct contact with the non-masked region of the base substrate, use thereof for a semiconductor element, manufacturing methods thereof and a method for controlling a dislocation line. The manufacturing method of the present invention is capable of making a part in the GaN group crystal layer, which is above a masked region or non-masked region, have a low dislocation density.

  Recently Added Patents
Adaptive input interface
Sampling filter device
Vehicle battery with cell balancing current paths and method of charging the same
Electronic device with embedded antenna
Spatially pre-processed target-to-jammer ratio weighted filter and method thereof
Automated pizza preparation and vending system
  Randomly Featured Patents
Circuit for compensating the errors occurring when changing the playing back speed of a double azimuth 4-head VTR
Apparatus for locking a converter tilting gear during a blasting operation
Disintegrative core for use in die casting of metallic components
Method and system for canceling orders for financial articles of trades
Computer front bezel
Ultrasonic doppler diagnostic system using pattern recognition
Discharge-in-magnetic-field type ion generating apparatus
Method and apparatus for jitter reduction
Apparatus and method for thermal balancing of the rotor of a dynamo-electric machine
Electronic drum