Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
GAN group crystal base member having low dislocation density, use thereof and manufacturing methods thereof










Image Number 2 for United States Patent #6225650.

A GaN group crystal base member comprising a base substrate, a mask layer partially covering the surface of said base substrate to give a masked region, and a GaN group crystal layer grown thereon to cover the mask layer, which is partially in direct contact with the non-masked region of the base substrate, use thereof for a semiconductor element, manufacturing methods thereof and a method for controlling a dislocation line. The manufacturing method of the present invention is capable of making a part in the GaN group crystal layer, which is above a masked region or non-masked region, have a low dislocation density.








 
 
  Recently Added Patents
Graphical planner
Motor with power-generation coil module
DL control channel structure enhancement
Probe for ultrasound diagnostic apparatus
Food-grade flour from dry fractionated corn germ and collet composition and method for producing same
Creating and manufacturing documents that initially exceed equipment finishing capacity
Paper product with surface pattern
  Randomly Featured Patents
High dielectric constant embedded capacitors
Photopolymerizable latex systems
Stable aqueous polyurethane dispersions
Spacer for fuel rods
Lubricant composition containing a boron reaction product
Miniature gimbal mounted magnetic field detectors
Spacer structure for image forming apparatus
Endless belt electrophotography, process for producing the endless belt, and image forming apparatus having the endless belt
Air propelling toy
Superconductor cable