Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
GAN group crystal base member having low dislocation density, use thereof and manufacturing methods thereof










Image Number 2 for United States Patent #6225650.

A GaN group crystal base member comprising a base substrate, a mask layer partially covering the surface of said base substrate to give a masked region, and a GaN group crystal layer grown thereon to cover the mask layer, which is partially in direct contact with the non-masked region of the base substrate, use thereof for a semiconductor element, manufacturing methods thereof and a method for controlling a dislocation line. The manufacturing method of the present invention is capable of making a part in the GaN group crystal layer, which is above a masked region or non-masked region, have a low dislocation density.








 
 
  Recently Added Patents
System and method for displaying a constant time selection context menu interface
Data processing system, data processing method, and image forming apparatus
Efficient file system metadata scanning using scoped snapshots
Lateral double diffused metal oxide semiconductor device and method of manufacturing the same
Block copolymer nanoparticle compositions
Method and system for placing an emergency call
Bioreactor device, and method and system for fabricating tissues in the bioreactor device
  Randomly Featured Patents
Process for the production of a casein substitute
Passenger boat's deck
Hard-coated antiglare film, polarizing plate, and image display
Application programming interface for modem and ISDN processing
Electrical interconnection structure for diverse signals
Method of producing refractory metal or alloy materials
Speech coder/decoder
Heat dissipating fin
Method of centering an ophthalmic lens on a rimless frame
Novel carboxylic acid esters