Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Method for forming shallow trench isolations










Image Number 4 for United States Patent #6221785.

A method for forming shallow trench isolations includes the steps of defining a wafer substrate, forming a silicon dioxide insulating layer on the substrate, depositing a silicon nitride layer on the silicon dioxide insulating layer, and forming at least one trench in the substrate through the silicon dioxide and silicon nitride layers. The method also includes the steps of depositing a silicon dioxide layer over the silicon nitride layer and in the trench, removing the silicon dioxide layer deposited over the silicon nitride layer, anisotropically etching the silicon dioxide layer to produce silicon dioxide sidewalls in the trench contiguous with the silicon nitride layer, isotropically etching to remove the sidewalls and removing the silicon nitride layer.








 
 
  Recently Added Patents
Modulation of HSP47 expression
Image signal processing apparatus and image signal processing method
Identification of protected content in e-mail messages
Power supply device
Treatment of diabetes with milk protein hydrolysate
Method to calibrate RF paths of an FHOP adaptive base station
Method and apparatus for map transmission in wireless communication system
  Randomly Featured Patents
Method of forming a metal matrix composite body by a spontaneous infiltration technique
Parallel hydrodesulfurization of naphtha and distillate streams with passage of distillate overhead as reflux to the naphtha distillation zone
Locating device for ear-muffs on helmets
Method, apparatus and system for scanning optical codes
Reversing advanced glycosylation cross-links using heterocyclic-substituted thiazolium compounds
Connecting rod
Method and device for equalizing the moisture content of porous material
Construction insert for elevator hoistway
Method for indicating a free-line state in a binary data communication system
Flame retardant resin composition