Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Method for forming shallow trench isolations










Image Number 4 for United States Patent #6221785.

A method for forming shallow trench isolations includes the steps of defining a wafer substrate, forming a silicon dioxide insulating layer on the substrate, depositing a silicon nitride layer on the silicon dioxide insulating layer, and forming at least one trench in the substrate through the silicon dioxide and silicon nitride layers. The method also includes the steps of depositing a silicon dioxide layer over the silicon nitride layer and in the trench, removing the silicon dioxide layer deposited over the silicon nitride layer, anisotropically etching the silicon dioxide layer to produce silicon dioxide sidewalls in the trench contiguous with the silicon nitride layer, isotropically etching to remove the sidewalls and removing the silicon nitride layer.








 
 
  Recently Added Patents
Transparent zebrafish and preparation method thereof
Content protection apparatus and content encryption and decryption apparatus using white-box encryption table
Technique for effectively providing program material in a cable television system
Acceleration based mode switch
Generation, display, and manipulation of measurements in computer graphical designs
Semiconductor process
Authentication for social networking messages
  Randomly Featured Patents
Averaging flash analog-to-digital converter
Steam iron water gauge
Microbial blend compositions and methods for their use
Method, catalyst, and photocatalyst for the destruction of phosgene
Semiconductor memory device
Flow control mechanism in a data processing pipeline
Golf ball
Biocidal aldehyde composition
Process for planarizing array top oxide in vertical MOSFET DRAM arrays
Techniques for prediction and monitoring of clinical episodes