Resources Contact Us Home
Method for forming shallow trench isolations

Image Number 4 for United States Patent #6221785.

A method for forming shallow trench isolations includes the steps of defining a wafer substrate, forming a silicon dioxide insulating layer on the substrate, depositing a silicon nitride layer on the silicon dioxide insulating layer, and forming at least one trench in the substrate through the silicon dioxide and silicon nitride layers. The method also includes the steps of depositing a silicon dioxide layer over the silicon nitride layer and in the trench, removing the silicon dioxide layer deposited over the silicon nitride layer, anisotropically etching the silicon dioxide layer to produce silicon dioxide sidewalls in the trench contiguous with the silicon nitride layer, isotropically etching to remove the sidewalls and removing the silicon nitride layer.

  Recently Added Patents
Pressure-sensitive adhesive composition for optical films, pressure-sensitive adhesive optical film and image display
Video reproducing apparatus and video reproducing method
Digital IF demodulator for video applications
Activated carbon cryogels and related methods
Dynamic load profiling in a power network
Processes for producing polyunsaturated fatty acids in transgenic organisms
Plants and seeds of hybrid corn variety CH979678
  Randomly Featured Patents
Method of controlling the capacity of a transport refrigeration system
Two plate manifold with crossovers
Hearing instrument with parameter resetting and corresponding method
Connector monitoring assembly and a detector assembly including the same
Power consumption management in a video graphics accelerator
Compounds of the naphthalimide series
Folding machine for both inside and outside three folding operations
Shoe outsole
Remote control system having full-function and abbreviated-function remote control units
Data recording and reproduction apparatus