Resources Contact Us Home
Method for forming shallow trench isolations

Image Number 4 for United States Patent #6221785.

A method for forming shallow trench isolations includes the steps of defining a wafer substrate, forming a silicon dioxide insulating layer on the substrate, depositing a silicon nitride layer on the silicon dioxide insulating layer, and forming at least one trench in the substrate through the silicon dioxide and silicon nitride layers. The method also includes the steps of depositing a silicon dioxide layer over the silicon nitride layer and in the trench, removing the silicon dioxide layer deposited over the silicon nitride layer, anisotropically etching the silicon dioxide layer to produce silicon dioxide sidewalls in the trench contiguous with the silicon nitride layer, isotropically etching to remove the sidewalls and removing the silicon nitride layer.

  Recently Added Patents
Signal phase-based location of network nodes
Debugging using code analysis
Keypad assembly for electronic devices
Stacked magnetoresistance device responsive to a magnetic field generally perpendicular to a side face running along a channel of the device
System, apparatus and method for enabling/disabling display data channel access to enable/disable high-bandwidth digital content protection
Digital media content distribution
  Randomly Featured Patents
Apparatus and method for use in manufacturing a semiconductor device
Sawtooth wire
Golf training system
Flag display and storage case
Reduced height spacer for nuclear fuel rods
Stabilizers for polymer polyols
Event handling mechanism
Honeycomb cross-polarized load
Ink jet printer with ultraviolet curable ink, ultraviolet irradiation device, and maintenance station with ultraviolet irradiation masking
Self-propelled aircraft passenger elevator