Resources Contact Us Home
Method for forming shallow trench isolations

Image Number 4 for United States Patent #6221785.

A method for forming shallow trench isolations includes the steps of defining a wafer substrate, forming a silicon dioxide insulating layer on the substrate, depositing a silicon nitride layer on the silicon dioxide insulating layer, and forming at least one trench in the substrate through the silicon dioxide and silicon nitride layers. The method also includes the steps of depositing a silicon dioxide layer over the silicon nitride layer and in the trench, removing the silicon dioxide layer deposited over the silicon nitride layer, anisotropically etching the silicon dioxide layer to produce silicon dioxide sidewalls in the trench contiguous with the silicon nitride layer, isotropically etching to remove the sidewalls and removing the silicon nitride layer.

  Recently Added Patents
Method and system for modeling a common-language speech recognition, by a computer, under the influence of a plurality of dialects
Drive and startup for a switched capacitor divider
Controlling transmission resources in mobile radio systems with dualtransfer mode
Error detection and recovery tool for logical volume management in a data storage system
Light-source control device, light-source control method, image reading device, and image forming apparatus
Continuous geospatial tracking system and method
  Randomly Featured Patents
Low temperature single step curing polyimide adhesive
Univalve engine
NAND flash memory device having dummy memory cells and methods of operating same
Automotive high pressure pump solenoid valve with limp home calibration
Resorptive intramedullary implant between two bones or two bone fragments
Heteroaromatic selective inhibitors of neuronal nitric oxide synthase
Strategic modular commercial refrigeration
Link chain for an infinitely variable cone disk or cone pulley transmission
Swirl chamber in pneumatic forwarding tube systems