Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Method for forming shallow trench isolations










Image Number 4 for United States Patent #6221785.

A method for forming shallow trench isolations includes the steps of defining a wafer substrate, forming a silicon dioxide insulating layer on the substrate, depositing a silicon nitride layer on the silicon dioxide insulating layer, and forming at least one trench in the substrate through the silicon dioxide and silicon nitride layers. The method also includes the steps of depositing a silicon dioxide layer over the silicon nitride layer and in the trench, removing the silicon dioxide layer deposited over the silicon nitride layer, anisotropically etching the silicon dioxide layer to produce silicon dioxide sidewalls in the trench contiguous with the silicon nitride layer, isotropically etching to remove the sidewalls and removing the silicon nitride layer.








 
 
  Recently Added Patents
Authentication method
Determination of copy number variations using binomial probability calculations
Collating device, collating method, and program
Changing a system clock rate synchronously
Lightning-protective explosion-preventive fastener
Efficient location discovery
Package for a medicinal product
  Randomly Featured Patents
Four quadrant multiplying apparatus and method
Structure of clutch plate and production method of same
Bipolar electrode module
Default encryption and decryption
Automatic reset for personal alert safety system
Side entry coil induction heater with flux concentrator
Penicillins
Dust cap assembly having two snap ring securing mechanism in a slip spline assembly
Bottle
Catheter device for performing a cholangiogram during a laparoscopy surgery