Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Method for forming shallow trench isolations










Image Number 4 for United States Patent #6221785.

A method for forming shallow trench isolations includes the steps of defining a wafer substrate, forming a silicon dioxide insulating layer on the substrate, depositing a silicon nitride layer on the silicon dioxide insulating layer, and forming at least one trench in the substrate through the silicon dioxide and silicon nitride layers. The method also includes the steps of depositing a silicon dioxide layer over the silicon nitride layer and in the trench, removing the silicon dioxide layer deposited over the silicon nitride layer, anisotropically etching the silicon dioxide layer to produce silicon dioxide sidewalls in the trench contiguous with the silicon nitride layer, isotropically etching to remove the sidewalls and removing the silicon nitride layer.








 
 
  Recently Added Patents
Electronic device and control method therein
Digital media content distribution
Shoe
Systems and methods for sensing external magnetic fields in implantable medical devices
Electronic apparatus and manufacturing method of electronic apparatus
Computer implemented apparatus for generating and filtering creative proposal
Selecting input/output components of a mobile terminal
  Randomly Featured Patents
System for management of software employing memory for processing unit with regulatory information, for limiting amount of use and number of backup copies of software
Wireless interactive consumer video system
Driving method of solid-state imaging apparatus and solid-state imaging apparatus
Low DC coil resistance planar writer
BI-CMOS integrated circuit
Cryogenic air separation process and apparatus
Integrated circuit CMOS inverter structure
System and method for Micro Electro Mechanical System (MEMS) device characterization
Comprehending a circuit design
Electrodeposition method