Resources Contact Us Home
Method for forming shallow trench isolations

Image Number 4 for United States Patent #6221785.

A method for forming shallow trench isolations includes the steps of defining a wafer substrate, forming a silicon dioxide insulating layer on the substrate, depositing a silicon nitride layer on the silicon dioxide insulating layer, and forming at least one trench in the substrate through the silicon dioxide and silicon nitride layers. The method also includes the steps of depositing a silicon dioxide layer over the silicon nitride layer and in the trench, removing the silicon dioxide layer deposited over the silicon nitride layer, anisotropically etching the silicon dioxide layer to produce silicon dioxide sidewalls in the trench contiguous with the silicon nitride layer, isotropically etching to remove the sidewalls and removing the silicon nitride layer.

  Recently Added Patents
Method and system for establishing security connection between switch equipments
Probe for ultrasound diagnostic apparatus
Low drop-out regulator providing constant current and maximum voltage limit
Information processing apparatus, including updating of program and program information, and method of updating program of the information processing apparatus
Modulation of TIM receptor activity in combination with cytoreductive therapy
White light emitting lamp and white LED lighting apparatus including the same
  Randomly Featured Patents
Interactive security control system with real time activity reports
Single-ended CMOS sense amplifier
Electron gun for a color cathode ray tube
Cut flowers display water tank
Optical fiber processing method
Geranium plant named `Campeye`
Synchronizing vital product data for computer processor subsystems
Liquid crystal display
5'-modified bicyclic nucleic acid analogs
Computer mouse