Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Method for forming shallow trench isolations










Image Number 4 for United States Patent #6221785.

A method for forming shallow trench isolations includes the steps of defining a wafer substrate, forming a silicon dioxide insulating layer on the substrate, depositing a silicon nitride layer on the silicon dioxide insulating layer, and forming at least one trench in the substrate through the silicon dioxide and silicon nitride layers. The method also includes the steps of depositing a silicon dioxide layer over the silicon nitride layer and in the trench, removing the silicon dioxide layer deposited over the silicon nitride layer, anisotropically etching the silicon dioxide layer to produce silicon dioxide sidewalls in the trench contiguous with the silicon nitride layer, isotropically etching to remove the sidewalls and removing the silicon nitride layer.








 
 
  Recently Added Patents
Undercabinet plug-in mount
Cathode active material and lithium secondary battery comprising the same
Optical multiplexer/demultiplexer
Baseball themed hand clap maraca
Rate controlled first in first out (FIFO) queues for clock domain crossing
Architectural panel with bamboo rings light density embossed surface
Optical analysis device, optical analysis method and computer program for optical analysis
  Randomly Featured Patents
Gigabit switch with multicast handling
Pet commode
Double rack and pinion oscillating device
Method and apparatus for water jet trim on boats
Injection-moulding tool for the production of information carriers in disc form
Rotation stage
Storing images having semi-transparent pixels via alpha regions
Method, apparatus, and product for asserting physical presence with a trusted platform module in a hypervisor environment
Method and system for partial-order analysis of multi-dimensional data
Intercommunication system