Resources Contact Us Home
Method for forming shallow trench isolations

Image Number 4 for United States Patent #6221785.

A method for forming shallow trench isolations includes the steps of defining a wafer substrate, forming a silicon dioxide insulating layer on the substrate, depositing a silicon nitride layer on the silicon dioxide insulating layer, and forming at least one trench in the substrate through the silicon dioxide and silicon nitride layers. The method also includes the steps of depositing a silicon dioxide layer over the silicon nitride layer and in the trench, removing the silicon dioxide layer deposited over the silicon nitride layer, anisotropically etching the silicon dioxide layer to produce silicon dioxide sidewalls in the trench contiguous with the silicon nitride layer, isotropically etching to remove the sidewalls and removing the silicon nitride layer.

  Recently Added Patents
Planarizing agents and devices
Managing multiple web services on a single device
Non-disruptive configuration of a virtualization controller in a data storage system
Cathode active material and lithium secondary battery comprising the same
Image forming apparatus and system connectable with an authorization apparatus via a communications network, the image forming apparatus comprising an apparatus control section, an initial inq
Automatic logical position adjustment of multiple screens
Self-assembling surface coating
  Randomly Featured Patents
Taste masking of phenolics using citrus flavors
Track-type slide projector magazine
Railway Coupler Shank Keyslot Contour
Inhibitors of serine proteases, particularly hepatitis C virus NS3 protease
Dynamic quantity sensor having movable and fixed electrodes with high rigidity
Value assessment of a computer program to a company
System for alignment and feeding cooperating fabric parts in sewing operations
Flotation assembly
Electrical discharge machine and machining method therefor
Method of making liquid membrane electrode