Resources Contact Us Home
Method for forming shallow trench isolations

Image Number 4 for United States Patent #6221785.

A method for forming shallow trench isolations includes the steps of defining a wafer substrate, forming a silicon dioxide insulating layer on the substrate, depositing a silicon nitride layer on the silicon dioxide insulating layer, and forming at least one trench in the substrate through the silicon dioxide and silicon nitride layers. The method also includes the steps of depositing a silicon dioxide layer over the silicon nitride layer and in the trench, removing the silicon dioxide layer deposited over the silicon nitride layer, anisotropically etching the silicon dioxide layer to produce silicon dioxide sidewalls in the trench contiguous with the silicon nitride layer, isotropically etching to remove the sidewalls and removing the silicon nitride layer.

  Recently Added Patents
Timing and cell specific system information handling for handover in evolved UTRA
Process of preparing functionalized polymers via enzymatic catalysis
System and method for discontinuous reception control start time
Low-coupling oxide media (LCOM)
Statistical information collection from one or more device(s) in storage communication with a computing platform
Method and system for imaging a cross section of a specimen
Isoselective polymerization of epoxides
  Randomly Featured Patents
Molecular transporters based on sugar and its analogues and processes for the preparation thereof
Method of processing a roll of exposed photographic film containing photographic images into corresponding digital images and then distributing visual prints produced from the digital images
Outer loop power control in a wireless communication system
Vehicle seat with multi-axis energy attenuation
Electrolyte reservoir for a fuel cell
Method for chemical surface modification of fumed silica particles
Magnetic transducer head assembly with support system therefor
Dual manifold mold with rotating center plate
Method of making anti-microbial polymeric surfaces