Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Method for forming shallow trench isolations










Image Number 2 for United States Patent #6221785.

A method for forming shallow trench isolations includes the steps of defining a wafer substrate, forming a silicon dioxide insulating layer on the substrate, depositing a silicon nitride layer on the silicon dioxide insulating layer, and forming at least one trench in the substrate through the silicon dioxide and silicon nitride layers. The method also includes the steps of depositing a silicon dioxide layer over the silicon nitride layer and in the trench, removing the silicon dioxide layer deposited over the silicon nitride layer, anisotropically etching the silicon dioxide layer to produce silicon dioxide sidewalls in the trench contiguous with the silicon nitride layer, isotropically etching to remove the sidewalls and removing the silicon nitride layer.








 
 
  Recently Added Patents
Hydrolases, nucleic acids encoding them and methods for making and using them
Soybean cultivar CL1013663
Low-staining room temperature curable coating composition
System for determining potential lot consolidation during manufacturing
Stable nanoemulsions for ultrasound-mediated drug delivery and imaging
Methods of forming integrated circuit packages
Systems and methods for providing live voicemail to a mobile handset
  Randomly Featured Patents
High-purity perfluoro-4-methyl-2-pentene and its preparation and use
Method of replication-based garbage collection in a multiprocessor system
Assembly for a vacuum cleaner having a sound-absorbing system
Fluid-bed reaction process
Perimeter
Remote identification, location and signaling response system
Mouse
Controller link for manageability engine
Compounds, their preparation and use
Mold and process for manufacturing helical shaped items