Resources Contact Us Home
Method for forming shallow trench isolations

Image Number 2 for United States Patent #6221785.

A method for forming shallow trench isolations includes the steps of defining a wafer substrate, forming a silicon dioxide insulating layer on the substrate, depositing a silicon nitride layer on the silicon dioxide insulating layer, and forming at least one trench in the substrate through the silicon dioxide and silicon nitride layers. The method also includes the steps of depositing a silicon dioxide layer over the silicon nitride layer and in the trench, removing the silicon dioxide layer deposited over the silicon nitride layer, anisotropically etching the silicon dioxide layer to produce silicon dioxide sidewalls in the trench contiguous with the silicon nitride layer, isotropically etching to remove the sidewalls and removing the silicon nitride layer.

  Recently Added Patents
Superior measuring system accurate interior measurments of large or very small enclosures
System and method for determining road conditions
Inventory and patient management system
Zoom lens and image pickup apparatus equipped with zoom lens
Depth sensor, depth estimation method using the same, and depth estimation device including the same
Planter support rail
Interchanging method and apparatus for a brake piston compressor
  Randomly Featured Patents
Coordination of beam forming in wireless communication systems
Method and apparatus for testing a vehicle occupant restraint system
Enhanced optical line terminal controller
Launch and recovery vessel
Photographic element having both a filter dye layer and a matte layer
6-carboxy-normorphinan derivatives, synthesis and uses thereof
Beverage container having a dynamic ornament mounted thereto
Gun securing and storage device
Methods for dynamically predicting workflow completion times and workflow escalations
System and method for the holographic deposition of material