Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Method for forming shallow trench isolations










Image Number 2 for United States Patent #6221785.

A method for forming shallow trench isolations includes the steps of defining a wafer substrate, forming a silicon dioxide insulating layer on the substrate, depositing a silicon nitride layer on the silicon dioxide insulating layer, and forming at least one trench in the substrate through the silicon dioxide and silicon nitride layers. The method also includes the steps of depositing a silicon dioxide layer over the silicon nitride layer and in the trench, removing the silicon dioxide layer deposited over the silicon nitride layer, anisotropically etching the silicon dioxide layer to produce silicon dioxide sidewalls in the trench contiguous with the silicon nitride layer, isotropically etching to remove the sidewalls and removing the silicon nitride layer.








 
 
  Recently Added Patents
All-angle light emitting element having high heat dissipating efficiency
Fast and compact circuit for bus inversion
Lithographic apparatus and device manufacturing method
Connector interface for a cable
Cancer treatment kits comprising therapeutic antibody conjugates that bind to aminophospholipids
External preparation composition for skin comprising ginseng flower or ginseng seed extracts
Bioreactor device, and method and system for fabricating tissues in the bioreactor device
  Randomly Featured Patents
Catalyst for polymerizing .alpha.-olefins
Automatic gain control apparatus which adjusts bias and gain to maximize signal to noise ratio
Method and system for maintaining historical data for data receivers
Synchronizing clocks across sub-nets
High speed rotating drive termination system
Establishing network policy for session-unaware mobile-device applications
Partitioned backplane slot to couple switch fabric blades to port blades
Determining placement of distributed application onto distributed resource infrastructure
Isolation of native casein by cryodestabilization
Applied configuration to cone for speaker