Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Semiconductor device and method for producing the same










Image Number 14 for United States Patent #6218299.

For example, in a plasma processing system, C.sub.4 F.sub.8 gas and C.sub.2 H.sub.4 gas are introduced as film-forming gases at flow rates of 60 sccm and 30 sccm, respectively, under the conditions of a pressure of 0.2 Pa, a microwave power of 2.7 kW, a radiofrequency power of 1.5 kW, and a wafer temperature of 350.degree. C. At the same time, a plasma gas is also introduced at a flow rate of 150 sccm to form CF film 13 having an F content of, for example, 22% on silicon substrate 11. This CF film 13 has a relative dielectric constant of 2.4.








 
 
  Recently Added Patents
Maize hybrid X95C382
Temporary protective cover for an exposed junction box
Method and system for shared high speed cache in SAS switches
Wireless communication method, wireless communication system, and mode switching method
Semiconductor device and method of manufacturing the same
Commissioning incoming packet switched connections
Washing machine
  Randomly Featured Patents
Positioning work stop
Dispensing closure
Sponge applicator cap
Electrolytic polymer capacitors for decoupling power delivery, packages made therewith, and systems containing same
Carnation plant named `Lonziata`
Method for striping a surface with paint and apparatus therefor
Apparatus and method for improved photoplethysmographic monitoring of multiple hemoglobin species using emitters having optimized center wavelengths
Modular enclosure system suitable for shipboard use
All weather tactical strike system (AWISS) and method of operation
Expandable enclosure