Resources Contact Us Home
Semiconductor device and method for producing the same

Image Number 14 for United States Patent #6218299.

For example, in a plasma processing system, C.sub.4 F.sub.8 gas and C.sub.2 H.sub.4 gas are introduced as film-forming gases at flow rates of 60 sccm and 30 sccm, respectively, under the conditions of a pressure of 0.2 Pa, a microwave power of 2.7 kW, a radiofrequency power of 1.5 kW, and a wafer temperature of C. At the same time, a plasma gas is also introduced at a flow rate of 150 sccm to form CF film 13 having an F content of, for example, 22% on silicon substrate 11. This CF film 13 has a relative dielectric constant of 2.4.

  Recently Added Patents
Catecholic butanes and use thereof for cancer therapy
Automatically capturing images that include lightning
Coordinate locating method and apparatus
Phosphonate compounds
System and method for interactive image-based modeling of curved surfaces using single-view and multi-view feature curves
Drug delivery system
Wireless communication method, wireless communication system, and mode switching method
  Randomly Featured Patents
Systems and methods for limiting joint temperature
Method and apparatus for predicting board deformation, and computer product
Cell-container and cell-lid for electric-accumulators particularly for those meant for traction
Golf wedge with shoe attachment
Image data converter
Machine for erecting folded cartons
Maize bZIP transcription factors and genes encoding the same and use thereof
Method of processing mass spectrum
Method and apparatus for video coding by ABT-based just noticeable difference model