Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Semiconductor device and method for producing the same










Image Number 14 for United States Patent #6218299.

For example, in a plasma processing system, C.sub.4 F.sub.8 gas and C.sub.2 H.sub.4 gas are introduced as film-forming gases at flow rates of 60 sccm and 30 sccm, respectively, under the conditions of a pressure of 0.2 Pa, a microwave power of 2.7 kW, a radiofrequency power of 1.5 kW, and a wafer temperature of 350.degree. C. At the same time, a plasma gas is also introduced at a flow rate of 150 sccm to form CF film 13 having an F content of, for example, 22% on silicon substrate 11. This CF film 13 has a relative dielectric constant of 2.4.








 
 
  Recently Added Patents
Tuning peg for a stringed instrument
Ni-, Co-, and Mn- multi-element doped positive electrode material for lithium battery and its preparation method
Shoe
Frequency offset estimation apparatus and method of OFDM system
Non-phosphorus-based gellant for hydrocarbon fluids
Polishing composition
Optical analysis device, optical analysis method and computer program for optical analysis
  Randomly Featured Patents
Electroconductive particle placement sheet and anisotropic electroconductive film
Managing storage of individually accessible data units
Apparatus for fitting flexible strips
Biocidal preservatives
Chain tensioner
Smoking article with means to raise temperature of smoke
Conformance improvement additive, conformance treatment fluid made therefrom, method of improving conformance in a subterranean formation
Compact zoom lens
Apparatus for sensing position and/or torque
Highly purified titanium material, method for preparation of it and sputtering target using it