Resources Contact Us Home
Semiconductor device and method for producing the same

Image Number 14 for United States Patent #6218299.

For example, in a plasma processing system, C.sub.4 F.sub.8 gas and C.sub.2 H.sub.4 gas are introduced as film-forming gases at flow rates of 60 sccm and 30 sccm, respectively, under the conditions of a pressure of 0.2 Pa, a microwave power of 2.7 kW, a radiofrequency power of 1.5 kW, and a wafer temperature of C. At the same time, a plasma gas is also introduced at a flow rate of 150 sccm to form CF film 13 having an F content of, for example, 22% on silicon substrate 11. This CF film 13 has a relative dielectric constant of 2.4.

  Recently Added Patents
Front exterior of an automotive tail lamp
Transferases and oxidoreductases, nucleic acids encoding them and methods for making and using them
Method and structure for adding mass with stress isolation to MEMS structures
Selecting modulation and coding scheme in the presence of interference
Base station device and wireless communication method
Apparatus and method to simulate a power trip to a disk drive
Laser protection polymeric materials
  Randomly Featured Patents
Bonding capsules
Digital amplifier apparatus and method of resetting a digital amplifier apparatus
Antifouling coating composition
Distinct variety of Streptocarpus named Vreni
Line-card disabling for power management
Bottle sleeve
Motor driven centrifugal compressor/blower
Valve assembly
Antifuse detect circuit