Resources Contact Us Home
Cobalt salicidation method on a silicon germanium film

Image Number 14 for United States Patent #6214679.

A method of forming a cobalt germanosilicide film is described. According to the present invention a silicon germanium alloy is formed on a substrate. A cobalt film is then formed on the silicon germanium alloy. The substrate is then heated to a temperature of greater than C. for a period of time less than 20 seconds to form a cobalt germanium silicide film.

  Recently Added Patents
Real ear measurement system using thin tube
Monitoring and correcting upstream packet loss
Detection of code-based malware
Signal processing apparatus and methods
Method for designing sunlight-reflection and heat-radiation multilayer film
Combined high and low frequency stimulation therapy
Selecting input/output components of a mobile terminal
  Randomly Featured Patents
Base drive and overlap protection circuit
Two-part emulsion adhesive
Crown-holding head cap
Non-aqueous primary battery having a stannous sulfide cathode
Apparatus for determining immunoassays of antigens and their antibodies
Preparation of 21-halo steroids
Cascoded current regulator
Golf club adjusting machine for metal and wood shafts
Reconfigurable circuit with redundant reconfigurable cluster(s)
Deformation sensor