Resources Contact Us Home
Cobalt salicidation method on a silicon germanium film

Image Number 14 for United States Patent #6214679.

A method of forming a cobalt germanosilicide film is described. According to the present invention a silicon germanium alloy is formed on a substrate. A cobalt film is then formed on the silicon germanium alloy. The substrate is then heated to a temperature of greater than C. for a period of time less than 20 seconds to form a cobalt germanium silicide film.

  Recently Added Patents
Systems, methods and computer program products supporting provision of web services using IMS
Radio communication system, transmission apparatus, reception apparatus, and radio communication method in radio communication
Advertising system and method
Polarity switching member of dot inversion system
Illumination apparatus for microlithography projection system including polarization-modulating optical element
Prevention and reduction of blood loss
Hierarchical binding and lookup of addresses in inter-process communications systems
  Randomly Featured Patents
Electroactive materials
Heater for an electric flavor-generating article
Method and apparatus for generic scalable shape coding
Emulsion polymerization process
Vent recovery system
Packaging container having surface ornamentation
Urease-responsive delivery systems for diagnostic and therapeutic applications
Mixer for frequency converting both ground and satellite broadcasting signals
Cut stone
In situ pattern molding and adhesion of PVC heel pad blanks to automotive carpeting without dielectric means