Resources Contact Us Home
Cobalt salicidation method on a silicon germanium film

Image Number 14 for United States Patent #6214679.

A method of forming a cobalt germanosilicide film is described. According to the present invention a silicon germanium alloy is formed on a substrate. A cobalt film is then formed on the silicon germanium alloy. The substrate is then heated to a temperature of greater than C. for a period of time less than 20 seconds to form a cobalt germanium silicide film.

  Recently Added Patents
Family of pain producing substances and methods to produce novel analgesic drugs
Liquid low temperature injection molding process
Motor with power-generation coil module
Preserving user applied markings made to a hardcopy original document
Digital broadcast receiver and method for processing caption thereof
Test framework of visual components in a multitenant database environment
Method and system for dynamic digital rights bundling
  Randomly Featured Patents
Photolithography system including a SMIF pod and reticle library cassette designed for ESD protection
Method for manufacturing a moisture permeable electrode in a moisture sensor
Charge-based circuit analysis
Metal honeycomb catalyst support having a double taper
Anti-sludge medication ports and related methods
Filter device
Fixing device, method of fixing substrate and apparatus and method for manufacturing a liquid crystal display panel using the same
Data encoded optical pulse generator
Liquid crystal display device
Wrapper for smoking articles and method for preparing same