Resources Contact Us Home
Cobalt salicidation method on a silicon germanium film

Image Number 14 for United States Patent #6214679.

A method of forming a cobalt germanosilicide film is described. According to the present invention a silicon germanium alloy is formed on a substrate. A cobalt film is then formed on the silicon germanium alloy. The substrate is then heated to a temperature of greater than C. for a period of time less than 20 seconds to form a cobalt germanium silicide film.

  Recently Added Patents
Automatic baroreflex modulation responsive to adverse event
System and method for outputting virtual textures in electronic devices
Monitoring activity of a user in locomotion on foot
Printing system, information processing apparatus, print job processing method, information processing method, program, and storage medium
Compression molding method and reinforced thermoplastic parts molded thereby
Bamboo scrimber and manufacturing method thereof
  Randomly Featured Patents
Feedstuff composition for replacing antibiotics
Coated water-swellable material
Method and apparatus for detecting the motion variation of a projectile
Glass antenna device for an automobile
Tightening tool with interchangeable inserts
Dynamic volumetric instrument gauge
Chain saw anti-pinch guard arm
Base for a barbeque grill
Semiconductor memory device, method of adjusting the same and information processing system including the same
Global positioning system (GPS) based secure access