Resources Contact Us Home
Cobalt salicidation method on a silicon germanium film

Image Number 14 for United States Patent #6214679.

A method of forming a cobalt germanosilicide film is described. According to the present invention a silicon germanium alloy is formed on a substrate. A cobalt film is then formed on the silicon germanium alloy. The substrate is then heated to a temperature of greater than C. for a period of time less than 20 seconds to form a cobalt germanium silicide film.

  Recently Added Patents
Inhibitors of bacterial tyrosine kinase and uses thereof
Method and system for prioritizing points of interest for display in a map using category score
Recovering a database to any point-in-time in the past with guaranteed data consistency
Knee guard
Switching module and switching synchronization system
Expression of dirigent gene EG261 and its orthologs and paralogs enhances pathogen resistance in plants
Electronic device and control method therein
  Randomly Featured Patents
Method of manufacturing semiconductor mirror wafers
Gap-slotted protector for a personal flotation device
Coupling the switching of which is dependent on the rotational speed
Method of making specimens for an electron microscope
Centrifugal filter
Systems and methods for removing finely dispersed particulate matter from a fluid stream
Composite ball bat having a metal knob
Gripping apparatus and method
Data and control multiplexing in PUSCH in wireless networks
Minimizing complex decisions to allocate additional resources to a job submitted to a grid environment