Resources Contact Us Home
Cobalt salicidation method on a silicon germanium film

Image Number 13 for United States Patent #6214679.

A method of forming a cobalt germanosilicide film is described. According to the present invention a silicon germanium alloy is formed on a substrate. A cobalt film is then formed on the silicon germanium alloy. The substrate is then heated to a temperature of greater than C. for a period of time less than 20 seconds to form a cobalt germanium silicide film.

  Recently Added Patents
Heat shield and laminated glass
Cooking oven with energy saving mode and method
Bus controller for handling split transactions
Method and system for remotely testing a wireless device
Compression molding method and reinforced thermoplastic parts molded thereby
Clothing fastener accessory
Method and system for automatically hiding irrelevant parts of hierarchical structures in computer user interfaces
  Randomly Featured Patents
Organic light emitting display
Plumbing fitting
Coating apparatus with tangential slide allowing a vertical and fast flow of photographic emulsion
Semiconductor processor systems, a system configured to provide a semiconductor workpiece process fluid
Tyre foundation structure
Semiconductor device and manufacturing method thereof
Damper mechanism
Electrosurgical device
Lactam-substituted dicarboxylic acids and use thereof
Shock resistant ink compositions and writing instruments including the compositions