Resources Contact Us Home
Cobalt salicidation method on a silicon germanium film

Image Number 13 for United States Patent #6214679.

A method of forming a cobalt germanosilicide film is described. According to the present invention a silicon germanium alloy is formed on a substrate. A cobalt film is then formed on the silicon germanium alloy. The substrate is then heated to a temperature of greater than C. for a period of time less than 20 seconds to form a cobalt germanium silicide film.

  Recently Added Patents
RF/optical shared aperture for high availability wideband communication RF/FSO links
Instrumenting configuration and system settings
Circuit for and method of enabling communication of cryptographic data
Interference suppressing OFDM system for wireless communications
Integrated advance copper fuse combined with ESD/over-voltage/reverse polarity protection
Solid-state imaging apparatus, method of manufacturing solid-state imaging apparatus, and electronic apparatus
Apparatus and method for an iterative cryptographic block
  Randomly Featured Patents
Type-1 polysilicon electrostatic discharge transistors
Foil and method for protecting film
Electrical connector assembly with complementary lever assist and terminal delay
AC integrated coupler with phase equalizer
Preparation of substituted alkanesulfonates from 2-hydroxyalkanesulfonates
Down hole gas separator
Overcup oak tree named `QLFTB`
Image operations using frame-based coordinate space transformations of image data in a digital imaging system
Stabilizer control system