Resources Contact Us Home
Cobalt salicidation method on a silicon germanium film

Image Number 13 for United States Patent #6214679.

A method of forming a cobalt germanosilicide film is described. According to the present invention a silicon germanium alloy is formed on a substrate. A cobalt film is then formed on the silicon germanium alloy. The substrate is then heated to a temperature of greater than C. for a period of time less than 20 seconds to form a cobalt germanium silicide film.

  Recently Added Patents
Electronic apparatus and manufacturing method of electronic apparatus
Radio communication system, base station apparatus, terminal apparatus, and radio communication method for radio communication system
Projection illumination system for EUV microlithography
Once daily formulations of tetracyclines
Power management implementation in an optical link
Control device with adjusting pulse width modulation function and the backlight module thereof
Semiconductor devices and methods for changing operating characteristics and semiconductor systems including the same
  Randomly Featured Patents
Pesticidal 2-pyridyl-4,5-dihydro-1,3,4-thiadiazoles
Dynamic spare column replacement memory system
Seed hopper construction with centrifugal blower-filler
System and method for accessing remote files in a distributed networking environment
Intramedullary rod instrument
Composite of aluminum material and synthetic resin molding and process for producing the same
Device and method for adjusting input gain for multiple signal formats in a data network
Method and apparatus for supplying electricity uniformly to a workpiece
Apparatus and methods for tendon or ligament repair
Low profile printed circuit board