Resources Contact Us Home
Cobalt salicidation method on a silicon germanium film

Image Number 13 for United States Patent #6214679.

A method of forming a cobalt germanosilicide film is described. According to the present invention a silicon germanium alloy is formed on a substrate. A cobalt film is then formed on the silicon germanium alloy. The substrate is then heated to a temperature of greater than C. for a period of time less than 20 seconds to form a cobalt germanium silicide film.

  Recently Added Patents
Serving base station selection based on backhaul capability
Automated difference recognition between speaking sounds and music
DFPase enzymes from Aplysia californica
Catalysts for hydrodeoxygenation of polyols
Dynamically reconfigurable systolic array accelorators
Tap initialization of equalizer based on estimated channel impulse response
System and method of error reporting in a video distribution network
  Randomly Featured Patents
Sliding and bearing material having superior wear resisting property
Method for recovering material values from bisphenol tars
Welding material and welded joint structure
Method of manufacturing a coil
Three dimensional scanning system
Thermoreversible hydrogels comprising linear copolymers and their use in electrophoresis
LCD personal computer
Metal hub for a helicopter rotor
Adapter for connecting oxygen tubing to nebulizer
Sensitive electrical to mechanical transducer