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Cobalt salicidation method on a silicon germanium film










Image Number 13 for United States Patent #6214679.

A method of forming a cobalt germanosilicide film is described. According to the present invention a silicon germanium alloy is formed on a substrate. A cobalt film is then formed on the silicon germanium alloy. The substrate is then heated to a temperature of greater than 850.degree. C. for a period of time less than 20 seconds to form a cobalt germanium silicide film.








 
 
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