Resources Contact Us Home
Hard mask for metal patterning

Image Number 3 for United States Patent #6093973.

An oxide hard mask is formed between a deep ultraviolet photoresist and an anti-reflective coating to prevent interactions with the photoresist, thereby preventing reduction of a critical dimension of a patterned conductive layer. Embodiments include depositing a substantially nitrogen free oxide layer on the anti-reflective coating, such as a silicon oxide derived from tertaethyl orthosilicate by plasma enhanced chemical vapor deposition.

  Recently Added Patents
Semiconductor overlapped PN structure and manufacturing method thereof
Security arrangements for extended USB protocol stack of a USB host system
System for purifying air through germicidal irradiation and method of manufacture
Semiconductor device including a clock generating circuit for generating an internal signal having a coarse delay line, a fine delay line and a selector circuit
Methods and apparatuses for configuring and operating graphics processing units
Method of transmitting and receiving a paging message in a mobile communication system
Electronic device
  Randomly Featured Patents
Microwave pyrometer
Pseudomonas chlororaphis microorganism, polyurethane degrading enzyme obtained therefrom, and method of use
Method of controlling rotation of optical recording medium at two or more rotational speeds, and storage apparatus employing same method
Rotor indexing system
Distributed sagnac sensor systems
Structural genes, plasmids and transformed cells for producing cysteine depleted muteins of interferon-.beta.
Rattle proof anchor fitting for securing loads to a retainer track
Stereoscopic electronic circuit device, and relay board and relay frame used therein
Paint viscosity measuring system
Structural beam and method of manufacture thereof