Resources Contact Us Home
Word line non-boosted dynamic semiconductor memory device

Image Number 13 for United States Patent #6088286.

A memory array is divided into memory blocks each including a predetermined number of rows, and voltages on storage nodes are boosted by changing cell plate voltages in the memory block including a selected word line. An unselected word line is held at a negative voltage level when the selected word line is driven to a power supply voltage level. Thereby, it is possible to prevent movement of charges due to connection of a bit line with the storage node at the time of change in cell plate voltage of an unselected memory cell, and destruction of data in the unselected memory cell can be prevented. A dynamic semiconductor memory device not requiring a boosted voltage is provided.

  Recently Added Patents
Method for cutting C--Mn steel with a fiber laser
Image processing device, printing apparatus, image processing method, and method of producing printing apparatus
Vehicle front fender
Transitional replacement of operations performed by a central hub
Plants and seeds of hybrid corn variety CH336383
Vehicle lamp component
Image forming unit having agitating portion and image forming apparatus
  Randomly Featured Patents
Float-type liquid level switch assembly with light emitting elements
Recreational didactic multicombinable device
Aerated frozen suspension with adjusted creaminess and scoop ability based on stress-controlled generation of superfine microstructures
Vaporization burner
Stacked semiconductor package
Method for fabricating a floating gate semiconductor device
Nested container holders
Method for stabilizing and selecting recombinant DNA containing host cell
Composition for slow release of volatile ingredients at _high temperature; and article comprising same