Resources Contact Us Home
Word line non-boosted dynamic semiconductor memory device

Image Number 10 for United States Patent #6088286.

A memory array is divided into memory blocks each including a predetermined number of rows, and voltages on storage nodes are boosted by changing cell plate voltages in the memory block including a selected word line. An unselected word line is held at a negative voltage level when the selected word line is driven to a power supply voltage level. Thereby, it is possible to prevent movement of charges due to connection of a bit line with the storage node at the time of change in cell plate voltage of an unselected memory cell, and destruction of data in the unselected memory cell can be prevented. A dynamic semiconductor memory device not requiring a boosted voltage is provided.

  Recently Added Patents
Downhole telemetry system
Soybean cultivar CL1013675
Sending notification of event
Apparatus, electronic component and method for generating reference voltage
Integrated circuit packaging system with laser hole and method of manufacture thereof
Flexure with insulating layer isolating a portion of a metal substrate
System and method for agitation of multiple specimen containers
  Randomly Featured Patents
Method and apparatus for removing volatilized materials from an enclosed space in a glass making process
Apparatus for tape automated bonding
Step feed device for bag filling machines
Method of forming a lower electrode of a capacitor in a DRAM cell
Piezoelectric devices and methods for manufacturing same
Removable RAM package for ambulatory medical monitor
Process for producing diphenylamines or N,N'-diphenyl-phenylenediamines
Multiple hydrocyclone apparatus
Adhesive or paint coating for toy articles
Ceramics-coated heat resisting alloy member