Image Number 12 for United States Patent #6081127.
The invention is directed to a method and an arrangement for the response analysis of semiconductor materials with optical excitation. The object of the invention, to find a new type of response analysis of semiconductor materials with optical excitation which also allows a sufficiently precise detection of the charge carrier wave with a higher excitation output and a shorter charge carrier lifetime, is met according to the invention in that an exciting laser beam is intensity-modulated with two discrete modulation frequencies (.OMEGA..sub.1 ; .OMEGA..sub.2), the luminescent light exiting from the object is measured on the difference frequency (.OMEGA..sub.1 -.OMEGA..sub.2), and the luminescent light is analyzed as a function of the arithmetic mean (.OMEGA.) of the modulation frequencies (.OMEGA..sub.1 ; .OMEGA..sub.2). The invention is applied in the semiconductor industry for determining different electrical parameters of semiconductor materials.