Resources Contact Us Home
Magnetoresistance effect element and magnetoresistance device

Image Number 4 for United States Patent #6074743.

A magnetoresistance effect element according to the present invention comprises magnetic multilayer film having a non-magnetic metal layer, a ferromagnetic layer formed on one surface of the non-magnetic metal layer, a soft magnetic layer formed on the other surface of the non-magnetic metal layer, and a pinning layer which is formed on the ferromagnetic layer to pin a direction of magnetization of the ferromagnetic layer, wherein the ferromagnetic layer and the pinning layer are coupled to each other with epitaxial growth.Accordingly, the magnetoresistance device using the magnetoresistance effect element as described above exhibits an extremely large MR ratio and a linear rise-up characteristic of MR change in an extremely small range of applied magnetic field of about -10 to 10 Oe, and has high sensitivity to magnetic field, a large MR slope under a high-frequency magnetic field and an excellent heat resistance.

  Recently Added Patents
Method and apparatus for laser strip splicing
Automatic search system and method
Fluorescent proteins
Disk drive
Implantable neuro-stimulation electrode with fluid reservoir
Method for transforming a single reactor line
Binder for secondary battery providing excellent adhesion strength and cycle property
  Randomly Featured Patents
Methods and systems for restricting electronic content access based on guardian control decisions
Membrane process and apparatus for argon purging from oxidation reactors
Passage determination device and passage determination method
Apparatus and method for data communication between two asynchronous buses
Method and apparatus for sealing cover tape to carrier tape
Thermoplastic molding process and apparatus
Microfiche reader
Method and apparatus for coupling a cable to a socket
Switching system for computers with 2-bit condition-representing signals