Resources Contact Us Home
Method of making a silicide semiconductor device with junction breakdown prevention

Image Number 8 for United States Patent #6027991.

A method of making a semiconductor device includes a semiconductor substrate, an impurity doped region formed in the semiconductor substrate, an insulating layer formed on the semiconductor substrate having an opening leading to the impurity doped region, a polycrystalline silicon layer formed on the insulating layer and the impurity doped region, and a metal silicide layer formed on the polycrystalline silicon layer. A transverse thickness of the polycrystalline silicon layer at a sidewall of the insulating layer is larger than a longitudinal thickness of the polycrystalline silicon layer at a bottom of the opening and at a surface of the insulating layer.

  Recently Added Patents
1,3-diiodohydantoin compound and production method thereof
Adhesive structure of optical device, adhesion method, and optical pickup device
Light-emitting device package and method of manufacturing the same
Method to alter silicide properties using GCIB treatment
Selective facsimile denial
Method and structure for image local contrast enhancement
Tactile output device for computing device notifications
  Randomly Featured Patents
Method for the destruction of unwanted compounds using metal oxides composites
Control device for variable displacement engine
Color filter having novel dyestuff
Powertrain with a six speed transmission
Airfoil shape for a turbine bucket
High speed lead inspection system
Batting practice method
Inertial turbine energy storage braking and power transmission system
Collapsible container
Air suspension system of a motor vehicle with air shocks or air spring with a compressed air container in the air suspension system