Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Semiconductor device and method of manufacturing the same










Image Number 16 for United States Patent #6020610.

With a semiconductor device and according to a manufacturing method of the invention, a trade-off relationship between a threshold value and a diffusion layer leak is eliminated, and it is not necessary to form a gate oxide film at a plurality of steps. Gate electrodes (4A, 4B and 4C) respectively comprise a polysilicon layer (M1) and a WSi layer (L1), the polysilicon layer (M1) and a WSi layer (L2), the polysilicon layer (M1) and a WSi layer (L3), which are respectively stacked in this order on a gate oxide film (3). Channel dope layers (103A, 103B and 103C) are formed within a well layer (101) respectively under the gate electrodes (4A, 4B and 4C).








 
 
  Recently Added Patents
Vapor phase decarbonylation process
Liposomal nanoparticles and other formulations of fenretinide for use in therapy and drug delivery
Fusing device to prevent overheating of a heating member and image forming apparatus having the same
Compositions and processes for forming photovoltaic devices
Hydrofluorocarbon refrigerant compositions for heat pump water heaters
Round carrying case
Avalanche photo diode and method of manufacturing the same
  Randomly Featured Patents
Process for the manufacture of a plastic web by coating
Coupling for tripartite injection or compression mold
Bath pillow
Method of scaling an image capable of line width preservation
Sheet material collating system
Discharge lamp and lighting equipment
Key RF FOB
Magnetic sensor using the earth's magnetism
Drive shaft bearing structure for boat
Vehicle motion control system