Resources Contact Us Home
Semiconductor device and method of manufacturing the same

Image Number 16 for United States Patent #6020610.

With a semiconductor device and according to a manufacturing method of the invention, a trade-off relationship between a threshold value and a diffusion layer leak is eliminated, and it is not necessary to form a gate oxide film at a plurality of steps. Gate electrodes (4A, 4B and 4C) respectively comprise a polysilicon layer (M1) and a WSi layer (L1), the polysilicon layer (M1) and a WSi layer (L2), the polysilicon layer (M1) and a WSi layer (L3), which are respectively stacked in this order on a gate oxide film (3). Channel dope layers (103A, 103B and 103C) are formed within a well layer (101) respectively under the gate electrodes (4A, 4B and 4C).

  Recently Added Patents
Compositions and methods for activating innate and allergic immunity
Systems and methods for providing a collaboration place interface including data that is persistent after a client is longer in the collaboration place among a plurality of clients
Amplitude-shift-keying (ASK) envelope detector and demodulation circuits
Battery-operated massager and soap dispensing wand
Optoelectronic semiconductor chip and method for manufacturing a contact structure for such a chip
Fabrication of high gradient insulators by stack compression
Electrostatic charger and image forming apparatus
  Randomly Featured Patents
Stereo bit clock tuning
Stator for an automotive alternator
Method for washing wafers
Absorbent/adsorbent pads
ZPC polypeptides
Overextensible, three-piece telescopic guide
Ammonia nanosensors, and environmental control system
Method for attenuating interfering noise and corresponding hearing device
Internal wing aircraft
Identification tag for an animal collar or similar article