Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Semiconductor device and method of manufacturing the same










Image Number 16 for United States Patent #6020610.

With a semiconductor device and according to a manufacturing method of the invention, a trade-off relationship between a threshold value and a diffusion layer leak is eliminated, and it is not necessary to form a gate oxide film at a plurality of steps. Gate electrodes (4A, 4B and 4C) respectively comprise a polysilicon layer (M1) and a WSi layer (L1), the polysilicon layer (M1) and a WSi layer (L2), the polysilicon layer (M1) and a WSi layer (L3), which are respectively stacked in this order on a gate oxide film (3). Channel dope layers (103A, 103B and 103C) are formed within a well layer (101) respectively under the gate electrodes (4A, 4B and 4C).








 
 
  Recently Added Patents
Inkjet ink
Method of making a low-Rdson vertical power MOSFET device
Managing job execution
Specification of latency in programmable device configuration
Modular storage system
Managing aging of silicon in an integrated circuit device
Method and apparatus for reacquiring lines in a cache
  Randomly Featured Patents
Apparatus and method for stripping windings from a stator
Cover for a luminary device
Automatic toilet seat cleaning system
Dual card and method therefor
Oriented ferroelectric thin-film device and method for manufacturing the same
Pipe installation
Computer network for controlling and monitoring gaming devices
Transmitting over a network
Sulfurized olefin lubricant additives and compositions containing same
Liquid crystal display panel having electrostatic discharge prevention circuitry