Resources Contact Us Home
Semiconductor device and method of manufacturing the same

Image Number 11 for United States Patent #6020610.

With a semiconductor device and according to a manufacturing method of the invention, a trade-off relationship between a threshold value and a diffusion layer leak is eliminated, and it is not necessary to form a gate oxide film at a plurality of steps. Gate electrodes (4A, 4B and 4C) respectively comprise a polysilicon layer (M1) and a WSi layer (L1), the polysilicon layer (M1) and a WSi layer (L2), the polysilicon layer (M1) and a WSi layer (L3), which are respectively stacked in this order on a gate oxide film (3). Channel dope layers (103A, 103B and 103C) are formed within a well layer (101) respectively under the gate electrodes (4A, 4B and 4C).

  Recently Added Patents
Image decolorizing device
Control of protein activity using a conducting polymer
Opioid-nornicotine codrugs combinations for pain management
Method and system for providing an intelligent visual scrollbar position indicator
Apparatus and method for transmitting and receiving data
Flexible organic light emitting device and manufacturing method thereof
  Randomly Featured Patents
Automated configuration of a virtual private network
Dynamically creating trick files to hide latency in streaming networks
Pressure indicator gel system and method therefore
Full range correlator for use in a collision avoidance system
Cinematic dithering for television systems
Composite male hose coupler
Fluorocarbon polymers and processes for their preparation
Plastic wound bandage
Sulfone charge control agents for electrostatographic toners
Apparatus for the optical inspection of wafers