Resources Contact Us Home
Semiconductor device and method of manufacturing the same

Image Number 11 for United States Patent #6020610.

With a semiconductor device and according to a manufacturing method of the invention, a trade-off relationship between a threshold value and a diffusion layer leak is eliminated, and it is not necessary to form a gate oxide film at a plurality of steps. Gate electrodes (4A, 4B and 4C) respectively comprise a polysilicon layer (M1) and a WSi layer (L1), the polysilicon layer (M1) and a WSi layer (L2), the polysilicon layer (M1) and a WSi layer (L3), which are respectively stacked in this order on a gate oxide film (3). Channel dope layers (103A, 103B and 103C) are formed within a well layer (101) respectively under the gate electrodes (4A, 4B and 4C).

  Recently Added Patents
Portable, single member housing cord protector
Power surface mount light emitting die package
Method of requesting CQI reports
Medical device arm
Method of and apparatus for recording motion picture, which generate encoded data with higher compression efficiency using a motion vector similarity
Veronica plant named `Amethyst Plume`
Monitoring heap in real-time by a mobile agent to assess performance of virtual machine
  Randomly Featured Patents
System and method for a 3-D phenomenoscope
Photodetector and method for manufacturing photodetector
Melanocortin receptor ligands modified with hydantoin
Item of jewelry
Induction steam humidifier
Level shifter
Implantable cardiac stimulation device that minimizes parasitic muscle stimulation and method
Method and apparatus for filtering and cleaning the filter
Method for producing ethylene homopolymerizates and ethylene copolymerizates of a lower mass density
Bonding apparatus and bonding method