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Semiconductor device and method of manufacturing the same

Image Number 11 for United States Patent #6020610.

With a semiconductor device and according to a manufacturing method of the invention, a trade-off relationship between a threshold value and a diffusion layer leak is eliminated, and it is not necessary to form a gate oxide film at a plurality of steps. Gate electrodes (4A, 4B and 4C) respectively comprise a polysilicon layer (M1) and a WSi layer (L1), the polysilicon layer (M1) and a WSi layer (L2), the polysilicon layer (M1) and a WSi layer (L3), which are respectively stacked in this order on a gate oxide film (3). Channel dope layers (103A, 103B and 103C) are formed within a well layer (101) respectively under the gate electrodes (4A, 4B and 4C).

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