Resources Contact Us Home
Semiconductor device and method of manufacturing the same

Image Number 11 for United States Patent #6020610.

With a semiconductor device and according to a manufacturing method of the invention, a trade-off relationship between a threshold value and a diffusion layer leak is eliminated, and it is not necessary to form a gate oxide film at a plurality of steps. Gate electrodes (4A, 4B and 4C) respectively comprise a polysilicon layer (M1) and a WSi layer (L1), the polysilicon layer (M1) and a WSi layer (L2), the polysilicon layer (M1) and a WSi layer (L3), which are respectively stacked in this order on a gate oxide film (3). Channel dope layers (103A, 103B and 103C) are formed within a well layer (101) respectively under the gate electrodes (4A, 4B and 4C).

  Recently Added Patents
Method and system of channel detecting and reporting, terminal, and management center
Adhering composition and method of applying the same
Magnetic element with top shield coupled side shield lamination
Method of interfacing a host operating through a logical address space with a direct file storage medium
Laboratory spatula
Multi-channel memory system including error correction decoder architecture with efficient area utilization
Method and apparatus for wireless communication in a mesh network with central control of communication relationships
  Randomly Featured Patents
Cuvette and method of use
Semiconductor device
Use of 1-(1-pyrrolidinylcarbonyl)pyridinium salts to attach compounds to carboxylated particles and a kit containing same
Use of (+)-.alpha.-(2,3-dimethoxyphenyl-1-[2-(4-fluorophenyl)ethyl]-4-piperidin emethanol in treating depressive disorders and bipolar disorders
Method and apparatus for barcode selection of themographic survey images
Method of link adaptation of blind type using acknowledgements in ARQ system
On-vehicle radar device
Method for rinsing copper or copper base alloy foil after an anti-tarnish treatment
Remote scheduling of appointments with interactivety using a caller's unit