Resources Contact Us Home
Semiconductor device having SiGe spacer under an active layer

Image Number 7 for United States Patent #5955745.

A semiconductor device which does not allow production of leak current or a drop of the Early voltage and includes a diffused layer having a reduced depth. A silicon layer containing an impurity of a second conduction type is formed on a semiconductor substrate of a first conduction type, and a spacer layer formed from a single crystalline silicon layer containing germanium is provided under the silicon layer.

  Recently Added Patents
PVD coated tool
Context data in UPNP service information
Switching element for a valve train of an internal combustion engine
Method of operating an electromechanical converter, a controller and a computer program product
Uplink synchronization management in wireless networks
Memristive junction with intrinsic rectifier
Image manipulating system and method
  Randomly Featured Patents
Flash memory programming using an indication bit to interpret state
Method for total knee arthroplasty and resecting bone in situ
Hooking-type fully automatic electric meter
Reduction of ternary rules with common priority and actions
Clothing hanger or similar article
Independent rear wheel suspension with adjustable toe angle control during recession
Platform transport systems
Insitu molecular composites based on rigid-rod polyimides
Process for preparing detergent composition having high bulk density
Apparatus and methods for cooling slot step elimination