Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Semiconductor device having SiGe spacer under an active layer










Image Number 7 for United States Patent #5955745.

A semiconductor device which does not allow production of leak current or a drop of the Early voltage and includes a diffused layer having a reduced depth. A silicon layer containing an impurity of a second conduction type is formed on a semiconductor substrate of a first conduction type, and a spacer layer formed from a single crystalline silicon layer containing germanium is provided under the silicon layer.








 
 
  Recently Added Patents
PLL circuit
Devices, systems, and methods for tactile feedback and input
Soft co-processors to provide a software service function off-load architecture in a multi-core processing environment
Method and system of a sensor interface having dynamic automatic gain control
Over the counter medicinal container with surface ornamentation
Motion estimation for a video transcoder
Mobile communication terminal provided with handsfree function and controlling method thereof
  Randomly Featured Patents
Heat sink
Reagent delivery system
System and method of panelized construction
High density data storage module
Plastics film dispenser
Method of preparing insulating refractory products and the product thereof
Glass melting furnace and method
Flow meter using an expanded tube section and sensitive differential pressure measurement
Method of installing blind fastener
Server, screen transmitting method, and program storage medium