Resources Contact Us Home
Semiconductor device having SiGe spacer under an active layer

Image Number 7 for United States Patent #5955745.

A semiconductor device which does not allow production of leak current or a drop of the Early voltage and includes a diffused layer having a reduced depth. A silicon layer containing an impurity of a second conduction type is formed on a semiconductor substrate of a first conduction type, and a spacer layer formed from a single crystalline silicon layer containing germanium is provided under the silicon layer.

  Recently Added Patents
Server-side connection resource pooling
Self assembly of elements for displays
Optical cable plug-in detection
Recovering a database to any point-in-time in the past with guaranteed data consistency
Reverse mapping method and apparatus for form filling
Electrical installation arrangement
  Randomly Featured Patents
Portable cooler
Single bladed ceiling fan
Thermally wavelength tunable lasers
Apparatus for rinsing electroplating solution from articles
Surface pattern for a casino table
Roller slide
Method of selecting a voice channel in a radio telecommunications network
Sun bench
Module including a sintered joint bonding a semiconductor chip to a copper surface
Graft deployment assist tool