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Semiconductor memory device and method of controlling imprint condition thereof










Image Number 2 for United States Patent #5953245.

A semiconductor memory device with a plurality of memory cells each having a ferroelectric material for storing a data item by its residual polarization is made usable selectably both as a RAM and as a ROM by controlling the so-called "imprint condition" of the ferroelectric material. When some of the memory cells are going to be used to a ROM or when the memory cells in an imprint condition are going to be used a RAM, heat and/or voltage pulses with an appropriate polarity are applied to the data-storing ferroelectric material to change its hysteresis characteristics.








 
 
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