Image Number 2 for United States Patent #5932915.
An electro static discharge (ESD)-protecting circuit includes a semiconductor substrate of a first conductivity type, a well of a second conductivity type formed within the semiconductor substrate, a first impurity diffusion region of the first conductivity type formed in the well, second and third impurity diffusion regions of the second conductivity type spaced apart from the first impurity diffusion region in the well, an input port connected to the first impurity diffusion region, and a ground port connected to the third impurity diffusion region.
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