Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Semiconductor laser device










Image Number 3 for United States Patent #5923690.

A gallium nitride group compound semiconductor laser device of the present invention includes: a substrate; and a layered structure provided on the substrate, wherein the layered structure includes an In.sub.z Ga.sub.1-z N active layer (0.ltoreq.z.ltoreq.1) which is formed at least in a first region, an n-type Al.sub.x Ga.sub.1-x N cladding layer (0.ltoreq.x.ltoreq.1) and a p-type Al.sub.y Ga.sub.1-y N cladding layer (0.ltoreq.y.ltoreq.1) interposing the active layer therebetween, and a current-defining structure made of Al.sub.u Ga.sub.1-u N (0.ltoreq.u.ltoreq.1) having an opening corresponding to the first region for defining a current within the first region.








 
 
  Recently Added Patents
Methods and systems for dynamic spectrum arbitrage
Inverter, NAND gate, and NOR gate
Basketball
Incrementally increasing deployment of gateways
Method and apparatus for accessing and downloading information from the internet
Tropoelastin derivatives
Imaging apparatus having selection unit to select focus detection areas
  Randomly Featured Patents
Cable pair continuity tester
X-ray detection methods and apparatus
System and method for generating attribute-based selectable search extension
Method of and device for transferring content
Enhanced procedures for preparing food hydrolysates
Speaker box
Energy saving heat recycling system
Greeting card
Inbred corn line ML8
Grayscale character generator and method