Resources Contact Us Home
Semiconductor laser device

Image Number 11 for United States Patent #5923690.

A gallium nitride group compound semiconductor laser device of the present invention includes: a substrate; and a layered structure provided on the substrate, wherein the layered structure includes an In.sub.z Ga.sub.1-z N active layer (0.ltoreq.z.ltoreq.1) which is formed at least in a first region, an n-type Al.sub.x Ga.sub.1-x N cladding layer (0.ltoreq.x.ltoreq.1) and a p-type Al.sub.y Ga.sub.1-y N cladding layer (0.ltoreq.y.ltoreq.1) interposing the active layer therebetween, and a current-defining structure made of Al.sub.u Ga.sub.1-u N (0.ltoreq.u.ltoreq.1) having an opening corresponding to the first region for defining a current within the first region.

  Recently Added Patents
Computer product, information retrieval method, and information retrieval apparatus
Integrated control system for stability control of yaw, roll and lateral motion of a driving vehicle using an integrated sensing system to determine longitudinal velocity
Insulated container sleeve
High density vertical structure nitride flash memory
Fishing apparatus
Ice data collection system
Use of LPA for encouraging pregnancy, and fertility agent
  Randomly Featured Patents
Antimicrobial agents
Boat protection and storage device
Method of fabricating BiCMOS devices
System and method for predicting mechanical failures in machinery driven by an induction motor
Power switching circuitry
Separator guide for Z-folded sheets
Apparatus and method of forming an envelope in a document security apparatus
Seal assembly for surgical access device
Method for manufacturing a power transmitting apparatus
Floating collapsible utility trailer