Resources Contact Us Home
Semiconductor laser device

Image Number 10 for United States Patent #5923690.

A gallium nitride group compound semiconductor laser device of the present invention includes: a substrate; and a layered structure provided on the substrate, wherein the layered structure includes an In.sub.z Ga.sub.1-z N active layer (0.ltoreq.z.ltoreq.1) which is formed at least in a first region, an n-type Al.sub.x Ga.sub.1-x N cladding layer (0.ltoreq.x.ltoreq.1) and a p-type Al.sub.y Ga.sub.1-y N cladding layer (0.ltoreq.y.ltoreq.1) interposing the active layer therebetween, and a current-defining structure made of Al.sub.u Ga.sub.1-u N (0.ltoreq.u.ltoreq.1) having an opening corresponding to the first region for defining a current within the first region.

  Recently Added Patents
Package for product
Semiconductor memory device and manufacturing method thereof
Automatic search system and method
High frequency vertical spring probe
Combination of a microorganism and a phytosphingosine derivative, composition, methods of use
Efficient file system metadata scanning using scoped snapshots
Digital display
  Randomly Featured Patents
Oxysulfonic derivative of copolymer of acrolein and acrylic acid and direct action anticoagulant on its basis
Production of optical elements
Process and apparatus for verifying the cut-off torque of an actuator
Method and system for copying the data contents of a computer system memory during application program run-time
Internal combustion engine
Wait-time service in a telecommunications network
Near-field light transducer comprising propagation edge with predetermined curvature radius
Centrifuge bowl with attached cast inner liner
Cluster assembly means for articles of furniture and articles incorporating the same
Internal combustion engine