Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Semiconductor integrated circuit arrangement fabrication method










Image Number 3 for United States Patent #5874013.

To realize etching with a high selection ratio and a high accuracy in fabrication of an LSI, the composition of dissociated species of a reaction gas is accurately controlled when dry-etching a thin film on a semiconductor substrate by causing an inert gas excited to a metastable state in a plasma and a flon gas to interact with each other, and selectively obtaining desired dissociated species.








 
 
  Recently Added Patents
Optical modulation element
Smart television system having methods or means for accessing paid or subscribed digital content from the internet
System and method for dynamic quality-of-service-based billing in a peer-to-peer network
Cooking tray
Maize hybrid X08B748
Imaging lens
Mobile application for calendar sharing and scheduling
  Randomly Featured Patents
Punching tool having interchangeable punches
Copolymeric mordants and photographic products and processes utilizing same
Method and apparatus for continuously freezing and melting a fluid mixture
Hydroterphenyls
Umbrella with safety light
Multicarrier transmission system with low power sleep mode and rapid-on capability
Method and apparatus for distributing information within a packet switching system
Method of controlling a traffic control system and a traffic control system for use of the method
Phase-changeable memory devices including phase-changeable materials on silicon nitride layers
Process for treating waste water and an apparatus therefor