Resources Contact Us Home
Semiconductor integrated circuit arrangement fabrication method

Image Number 2 for United States Patent #5874013.

To realize etching with a high selection ratio and a high accuracy in fabrication of an LSI, the composition of dissociated species of a reaction gas is accurately controlled when dry-etching a thin film on a semiconductor substrate by causing an inert gas excited to a metastable state in a plasma and a flon gas to interact with each other, and selectively obtaining desired dissociated species.

  Recently Added Patents
Calendar integration methods and systems for presentation of events having combined activity and location information
Integrated circuit packaging system with heat slug and method of manufacture thereof
Method and system for Bluetooth low power link layer connection setup
Method for fabrication of a semiconductor device and structure
System and method for efficient association of a power outlet and device
Image forming apparatus and warming up method thereof
Method of inspecting wafer
  Randomly Featured Patents
4-(heteroaryl)-1-[(2,3-dihydro-1-indol-1-yl)alkyl]piperadines and related compounds and their therapeutic utility
CVD material compound and method for manufacturing the same, and CVD method of iridium or iridium compound thin film
Fuel injector with electric shield
Method and apparatus for checking a mask pattern
Zr-rich bulk amorphous alloy article and method of surface grinding thereof
Enhanced tunable plasma-melter vitrification systems
Method and apparatus for establishing a reference current for use in operating a synchronous motor
Manufacturing cell using tooling apparatus
Cosmetic composition
Fingerprint sensor and interface