Resources Contact Us Home
Semiconductor integrated circuit arrangement fabrication method

Image Number 2 for United States Patent #5874013.

To realize etching with a high selection ratio and a high accuracy in fabrication of an LSI, the composition of dissociated species of a reaction gas is accurately controlled when dry-etching a thin film on a semiconductor substrate by causing an inert gas excited to a metastable state in a plasma and a flon gas to interact with each other, and selectively obtaining desired dissociated species.

  Recently Added Patents
Method for transforming a single reactor line
Techniques to manage communications resources for a multimedia conference event
Protecting a gaming machine from rogue code
Real-image zoom viewfinder and imaging apparatus
Extreme ultraviolet light generation apparatus
Vacuum cleaner
Systems and methods for tracking power modulation
  Randomly Featured Patents
Structure of a thermally and electrically enhanced plastic pin grid array (PPGA) package for high performance devices with wire bond interconnect
Dust resistant platform blade
System and method for indicating status of an on-chip power supply system
Tool reaction balancing mechanism
Sense amplifier circuit coupled to a bit line pair for increasing a difference in voltage level at an improved speed
Heat-shrinkable sheet
Planter with cup belt meter
Communication apparatus and method, and program thereof