Resources Contact Us Home
Semiconductor integrated circuit arrangement fabrication method

Image Number 12 for United States Patent #5874013.

To realize etching with a high selection ratio and a high accuracy in fabrication of an LSI, the composition of dissociated species of a reaction gas is accurately controlled when dry-etching a thin film on a semiconductor substrate by causing an inert gas excited to a metastable state in a plasma and a flon gas to interact with each other, and selectively obtaining desired dissociated species.

  Recently Added Patents
Computer program and apparatus for evaluating signal propagation delays
Program recording medium, image processing apparatus, imaging apparatus, and image processing method
Method of reducing acetaldehyde in polyesters, and polyesters therefrom
Engine RPM control device
Level shifter and method of using the same
System and method for deriving cell global identity information
Display panel and gate driving circuit and driving method for gate driving circuit
  Randomly Featured Patents
Microprocessor system for the analysis of physiologic datasets
Three-dimensional imaging using a luminescent surface and a differentially attenuating medium
Thermal vacuum gauge
Apparatus and methods for symbol timing error detection, tracking and correction
Phosphonitrilic polymers with curability by sulfur accelerated cures or radiation cures
Plant growth regulators
Image recorder
Swirling oscillation coffee maker
Binding peptides for carcinoembryonic antigen (CEA)
Office workstation