Resources Contact Us Home
Semiconductor integrated circuit arrangement fabrication method

Image Number 11 for United States Patent #5874013.

To realize etching with a high selection ratio and a high accuracy in fabrication of an LSI, the composition of dissociated species of a reaction gas is accurately controlled when dry-etching a thin film on a semiconductor substrate by causing an inert gas excited to a metastable state in a plasma and a flon gas to interact with each other, and selectively obtaining desired dissociated species.

  Recently Added Patents
Transmitting apparatus and retransmitting method
System for targeted delivery of therapeutic agents
Liquid crystal display
Amnion-derived cells, methods of making and uses thereof
Systems and methods for controlling phasing of advancing substrates in absorbent article converting lines
Mechanical and moisture protection apparatus for electronic devices
Writing implement
  Randomly Featured Patents
System for cooling a high power fuel injector of a dual injector
Scalpel blade
System, method and program for user authentication, and recording medium on which the program is recorded
Tire monitoring system and method
Circular saw
Hand applicator for radially assembled spring retaining rings
Clutch system and method
Systems and methods for digital interface translation
Projection type image display unit
Communications device and communications program