Resources Contact Us Home
Semiconductor device and manufacturing method thereof

Image Number 12 for United States Patent #5864161.

A method of manufacturing a semiconductor device includes the steps of forming an insulating film on a silicon region of a substrate having the silicon region on a surface the insulating film having an opening for forming an exposed region of the silicon region, supplying a gas containing a halogen onto the silicon region, and supplying a source gas of silicon onto the silicon region, thereby selectively depositing the silicon on the exposed region of the silicon region.

  Recently Added Patents
Apparatus and method for sterilizing vessel with electron beam
Downlink scheduling in fractional frequency reuse (FFR) systems
PEGylated, extended insulins
Touchscreen with Z-velocity enhancement
Wireless refrigerant scale platform
Data processing method
Epitaxial substrate for electronic device, in which current flows in lateral direction and method of producing the same
  Randomly Featured Patents
Shift register unit circuit, shift register, array substrate and liquid crystal display
1,2-Dihydro-2-oxo-5-(hydroxy-and/or amino-phenyl)-nicotinonitriles and cardiotonic use thereof
Minimum charge FET fabricated on an ultrathin silicon on sapphire wafer
Method and apparatus for accurately measuring properties of a formation
Process for the preparation of methyl 2,2-dimethyl, -3-(2'methyl-propenyl)-cyclopropane-1,1-dicarboxylate
Badge for a golf club head
Method and apparatus of feeding corrugated boards
Extended RF range alarm system
Non-peptide polyamino acid bioerodible polymers
Computer metrics system and process for implementing same