Resources Contact Us Home
Inductive plasma reactor

Image Number 14 for United States Patent #5811022.

A plasma reactor and methods for processing semiconductor wafers are described. Gases are introduced into a reactor chamber. An induction coil surrounds the reactor chamber. RF power is applied to the induction coil and is inductively coupled into the reactor chamber causing a plasma to form. A split Faraday shield is interposed between the induction coil and the reactor chamber to substantially block the capacitive coupling of energy into the reactor chamber which may modulate the plasma potential. The configuration of the split Faraday shield may be selected to control the level of modulation of the plasma potential. For etch processes, a separate powered electrode may be used to accelerate ions toward a wafer surface. For isotropic etching processes, charged particles may be filtered from the gas flow, while a neutral activated species passes unimpeded to a wafer surface.

  Recently Added Patents
Flat panel crystal display employing simultaneous charging of main and subsidiary pixel electrodes
System and method for detecting states
Method for driving electrophoretic display device, electrophoretic display device, and electronic device
Electrical terminal
Variable month cross-platform photo calendar builder
Transfer of digital data through an isolation
Deceleration dependent shift control
  Randomly Featured Patents
Mountable apparatus and board having an installation status notifier
Bearded Needle
Selective removal of sulfur compounds from acid gas mixtures containing significant quantities of carbonyl sulfide
Book pull tab with retractable gripping member
Current source circuit
Safety binding with purchase on the upper
Optical film and liquid crystal display using the same
Method and apparatus for providing and integrating high-performance message queues in a user interface environment
I/O execution method for a virtual machine system and system therefor