Resources Contact Us Home
Inductive plasma reactor

Image Number 14 for United States Patent #5811022.

A plasma reactor and methods for processing semiconductor wafers are described. Gases are introduced into a reactor chamber. An induction coil surrounds the reactor chamber. RF power is applied to the induction coil and is inductively coupled into the reactor chamber causing a plasma to form. A split Faraday shield is interposed between the induction coil and the reactor chamber to substantially block the capacitive coupling of energy into the reactor chamber which may modulate the plasma potential. The configuration of the split Faraday shield may be selected to control the level of modulation of the plasma potential. For etch processes, a separate powered electrode may be used to accelerate ions toward a wafer surface. For isotropic etching processes, charged particles may be filtered from the gas flow, while a neutral activated species passes unimpeded to a wafer surface.

  Recently Added Patents
Dyes and methods of marking biological material
Method for processing an algae medium containing algae microorganisms to produce algal oil and by-products
Dual protocol input device
Shape based similarity of continuous wave doppler images
System and method for improving text input in a shorthand-on-keyboard interface
Buck converter having reduced ripple under a light load
Communication apparatus, communication method, and communication system
  Randomly Featured Patents
Non-aqueous cosmetic compositions with high solids content
Dielectric ceramic filter with improved electrical characteristics in high side of filter passband
Single-piece liquid-tight connector with snap-on cuff
Process for disinfecting water
Control apparatus of copying machine with improved communication function for centralized control unit
Method for carrying out auto refresh sequences on a DRAM
Inspection apparatus
Image forming device with aperture electrode body
Ice hockey stick blade structure
Ink jet recording apparatus