Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inductive plasma reactor










Image Number 14 for United States Patent #5811022.

A plasma reactor and methods for processing semiconductor wafers are described. Gases are introduced into a reactor chamber. An induction coil surrounds the reactor chamber. RF power is applied to the induction coil and is inductively coupled into the reactor chamber causing a plasma to form. A split Faraday shield is interposed between the induction coil and the reactor chamber to substantially block the capacitive coupling of energy into the reactor chamber which may modulate the plasma potential. The configuration of the split Faraday shield may be selected to control the level of modulation of the plasma potential. For etch processes, a separate powered electrode may be used to accelerate ions toward a wafer surface. For isotropic etching processes, charged particles may be filtered from the gas flow, while a neutral activated species passes unimpeded to a wafer surface.








 
 
  Recently Added Patents
Watch chain
Recovering a database to any point-in-time in the past with guaranteed data consistency
Doherty amplifier circuit
Data processing apparatus and data processing method for reducing an uneven color made up of two or more ink colors
Method and apparatus for re-routing calls in a packet network during failures
Clamp for fence panels
Methods and apparatus for providing video on demand and network PVR functions using IP streaming
  Randomly Featured Patents
EPROM having a reduced number of contacts
Mixing adaptor and system
Case for electronic device
Perhydrolase variant providing improved specific activity
Linear displacement sensor apparatus
Process for synthesizing carbapenem side chain intermediates
Method for the esterification of thiopropionates
Method for protecting plant life from acidic atmospheric pollutants
Nitriding furnace apparatus and method
Fume hood ventilation control system