Resources Contact Us Home
Measurement of the mobile ion concentration in the oxide layer of a semiconductor wafer

Image Number 4 for United States Patent #5773989.

A method and apparatus for measuring the concentration of mobile ions in the oxide layer of a semiconductor wafer from the contact potential shift caused by ion drift across the oxide that includes depositing charge (e.g., using a corona discharge device) on the surface of the oxide and heating the wafer to allow mobile ions in the oxide (especially Na.sup.+) to drift. The difference in the contact potential measured before and after heating provides an indication of the mobile ion concentration in the oxide layer.

  Recently Added Patents
Managing deduplication density
Method for providing information of access point selection
Multicolored light converting LED with minimal absorption
Electronic device and recording medium
Distortion compensation device, distortion compensation method, and radio transmitter
Bio-stimulant for improved plant growth and development
Surface emitting laser device, surface emitting laser array, optical scanning device, and image forming apparatus
  Randomly Featured Patents
Anti-infective and antithrombogenic medical articles and method for their preparation
Applicator tool
Shielded eddy current sensor for enhanced sensitivity
Proactive calendar notification agent
Fire panel with door providing ease of service
Optical disc driving apparatus
Printing apparatus and a method for loading media in said apparatus
Vented barrier cover
Elliptical exercise machine with integrated aerobic exercise system
Locking toggle assembly for jewelry