Resources Contact Us Home
Measurement of the mobile ion concentration in the oxide layer of a semiconductor wafer

Image Number 4 for United States Patent #5773989.

A method and apparatus for measuring the concentration of mobile ions in the oxide layer of a semiconductor wafer from the contact potential shift caused by ion drift across the oxide that includes depositing charge (e.g., using a corona discharge device) on the surface of the oxide and heating the wafer to allow mobile ions in the oxide (especially Na.sup.+) to drift. The difference in the contact potential measured before and after heating provides an indication of the mobile ion concentration in the oxide layer.

  Recently Added Patents
Method and apparatus for selective decoding in a wireless communication system
Method of treating a preceramic material
Method and apparatus for feeding a polyurethane mixture into hollow bodies
Trash bag retention device
Image manipulating system and method
Capacity and coverage self-optimization method and device in a mobile network
Perspective runway system
  Randomly Featured Patents
Method of and device for measuring chlorophyll of living leaves
Diaphragm material for acoustical transducer
LED light tube
Method and apparatus for enrollment and evaluation of speaker authentification
Substitution of high quality position measurements with upgraded low quality position measurements
Ferromagnetic gate memory
Wireless communication device receiving configuration data from multiple sources
Screwless terminal block linking apparatus
Method and apparatus for rendering instance geometry
Remote supervision and control system