Resources Contact Us Home
Measurement of the mobile ion concentration in the oxide layer of a semiconductor wafer

Image Number 4 for United States Patent #5773989.

A method and apparatus for measuring the concentration of mobile ions in the oxide layer of a semiconductor wafer from the contact potential shift caused by ion drift across the oxide that includes depositing charge (e.g., using a corona discharge device) on the surface of the oxide and heating the wafer to allow mobile ions in the oxide (especially Na.sup.+) to drift. The difference in the contact potential measured before and after heating provides an indication of the mobile ion concentration in the oxide layer.

  Recently Added Patents
Dual-leadframe multi-chip package and method of manufacture
Bioelectric battery for implantable device applications
Managing wear leveling and garbage collection operations in a solid-state memory using linked lists
High-frequency-link power-conversion system having direct double-frequency ripple current control and method of use
Printing system, information processing apparatus, print job processing method, information processing method, program, and storage medium
Liquid dispensing apparatus
Method and apparatus for efficiently inserting fills in an integrated circuit layout
  Randomly Featured Patents
Secure purchasing method and system in on-line auction
Interference cavity for controlling optical path
Sensor, in particular thermal sensor, and method for manufacturing a largely self-supporting membrane
Solar cell module having improved flexibility
Laptop computer with attached printer
Adjustable cover for outdoor electrical substations
Heating element
Cleaning implement
Structural door belt seal
Stack underflow debug with sticky base