Resources Contact Us Home
Measurement of the mobile ion concentration in the oxide layer of a semiconductor wafer

Image Number 4 for United States Patent #5773989.

A method and apparatus for measuring the concentration of mobile ions in the oxide layer of a semiconductor wafer from the contact potential shift caused by ion drift across the oxide that includes depositing charge (e.g., using a corona discharge device) on the surface of the oxide and heating the wafer to allow mobile ions in the oxide (especially Na.sup.+) to drift. The difference in the contact potential measured before and after heating provides an indication of the mobile ion concentration in the oxide layer.

  Recently Added Patents
Image forming apparatus
Method and computed tomography device and data storage medium for performing a dynamic CT examination on a patient
Base station device and wireless communication method
Anti-infective derivatives, method for the production thereof, pharmaceutical compositions containing same and uses of said derivatives in treatment
Method and system for distributing load by redirecting traffic
Receiver with feedback continuous-time delta-sigma modulator with current-mode input
Error recovery storage along a memory string
  Randomly Featured Patents
Half-rate clock logic block and method for forming same
Stacked electronic connector
Illuminated display
Method and apparatus for testing a frequency synthesizer in an RF modem
Volumetric spectral imaging
Method for programming a ROM cell arrangement
Deformable intraocular lens with anchored haptics
Dielectric inks for multilayer copper circuits
Combined 3D- and 2D-scanning machine-vision system and method
Winter front for the grill of a motor vehicle