Resources Contact Us Home
Measurement of the mobile ion concentration in the oxide layer of a semiconductor wafer

Image Number 4 for United States Patent #5773989.

A method and apparatus for measuring the concentration of mobile ions in the oxide layer of a semiconductor wafer from the contact potential shift caused by ion drift across the oxide that includes depositing charge (e.g., using a corona discharge device) on the surface of the oxide and heating the wafer to allow mobile ions in the oxide (especially Na.sup.+) to drift. The difference in the contact potential measured before and after heating provides an indication of the mobile ion concentration in the oxide layer.

  Recently Added Patents
Method and apparatus for determining storage capacity error for a data storage device
Mechanical and moisture protection apparatus for electronic devices
Method and apparatus for belling plastic pipe
Tunnel magnetoresistance read head with narrow shield-to-shield spacing
Assigning runtime artifacts to software components
Sensing during magnetic resonance imaging
Touchscreen with Z-velocity enhancement
  Randomly Featured Patents
Apparatus for re-transferring power from mechanically driven and/or electrically braked motors of spinning machines
Systems and methods for handling defective RFID media according to available printer output options
4-Hydroxy-benzimidazole compounds and therapeutic compositions
Optical measurements of properties in substances using propagation modes of light
Data receiver having variable rate symbol timing recovery with non-synchronized sampling
Method and apparatus for controlling a local oscillator
Anti-theft device
Quadruple composite performance enhancing mouthguard
Self-aligning hydraulic steering system
Electric shaver