Resources Contact Us Home
Method of and apparatus for measuring lifetime of carriers in semiconductor sample

Image Number 9 for United States Patent #5760597.

In addition to microwave and excitation light, bias light as well is irradiated upon a surface of a semiconductor sample that is passivated using a solution which contains an electrolyte. Irradiation of the bias light increases the quantity of ionic substances that exist in the solution, largely changes a surface potential of the semiconductor sample, and suppresses surface recombination. This makes it possible to measure the lifetime of carriers which exist within the semiconductor sample at a high accuracy, without influenced by surface recombination.

  Recently Added Patents
Monitoring activity of a user in locomotion on foot
Method and apparatus for sharing virtual workspaces
Generalized AC-DC synchronous rectification techniques for single- and multi-phase systems
Process for the preparation of morphinane analogues
Method and devices for handling access privileges
Method and system for determining a suppression factor of a suppression system and a lithographic apparatus
Wake-up radio system
  Randomly Featured Patents
Gas burner injector head
Reversible business forms
Electrostatic assisted web cooling and remoistening device
Post rip image rendering for microprinting
Utility knife handle
Electro-thermal lock
Method of manufacturing an enclosed transceiver
Rumble seat
Network protecting authentication proxy
Composite foundation post